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부품번호 | CRS04 기능 |
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기능 | SCHOTTKY BARRIER RECTIFIERS | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 5 페이지수
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS04
CRS04
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.49 V (max)
• Average forward current: IF (AV) = 1.0 A
• Repetitive peak reverse voltage: VRRM = 40 V
• Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM 40 V
Average forward current
IF (AV)
1.0 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
20 (50 Hz)
A
Junction temperature
Tj
−40~150
°C
Storage temperature
Tstg
−40~150
°C
Note 1: Ta = 31°C
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
JEDEC
JEITA
TOSHIBA
―
―
3-2A1A
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 0.013 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
Symbol
VFM (1)
VFM (2)
VFM (3)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-ℓ)
Test Condition
Min Typ. Max Unit
IFM = 0.1 A
IFM = 0.7 A
⎯ 0.395 ⎯
⎯ 0.475 0.49
V
IFM = 1.0 A
⎯ 0.51 ⎯
VRRM = 5 V
VRRM = 40 V
⎯ 0.6 ⎯
μA
⎯ ⎯ 100
VR = 10 V, f = 1.0 MHz
⎯ 47 ⎯ pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯
⎯
⎯ 70
°C/W
⎯ 140
⎯ ⎯ ⎯ 20 °C/W
Start of commercial production
1999-07
1 2013-11-01
Surge forward current
(non-repetitive)
32
Ta = 25°C
28 f = 50 Hz
24
20
16
12
8
4
0
1 10 100
Number of cycles
100
Pulse test
10
IR – Tj
(typ.)
1
0.1
0.01
0.001
30 V
40 V
20 V
10 V
VR = 5 V
0.0001
0
20 40 60 80 100 120 140 160
Junction temperature Tj (°C)
CRS04
Cj – VR
(typ.)
500
300
100
50
30
f = 1 MHz
Ta = 25°C
10
13
5
10
30 50
100
Reverse voltage VR (V)
PR (AV) – VR
0.6 Rectangular
waveform
0° 360°
0.5
VR
0.4
Conduction angle α
Tj = 150°C
0.3
300°
240°
180°
0.2 120°
60°
0.1
(typ.)
DC
0
0 10 20 30 40
Reverse voltage VR (V)
4 2013-11-01
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부품번호 | 상세설명 및 기능 | 제조사 |
CRS01 | Schottky Barrier Rectifier ( Diode ) | Toshiba Semiconductor |
CRS02 | Schottky Barrier Type Schottky Barrier Rectifier | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |