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부품번호 | NP100N04NUJ 기능 |
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기능 | MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | Renesas | ||
로고 | |||
전체 8 페이지수
NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100
Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current rating: ID(DC) = ±100 A
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP100N04NUJ–S18-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-262 (MP-25SK) TYP. 1.8g
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±100
±400
220
1.8
175
−55 to +175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
0.68
83.3
°C/W
°C/W
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
NP100N04NUJ
450
400
350
300
250
200
150
100
50
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.2 0.4 0.6 0.8 1 1.2 1.4
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
5
VDS = VGS
4 ID = 250 μA
3
2
1
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
3
2
1
0
0.1
VGS = 10 V
Pulsed
1 10 100 1000
ID - Drain Current - A
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
TA = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
0.01 VDS = 10 V
Pulsed
0.001
01234
VGS - Gate to Source Voltage - V
5
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
1000
100
TA = −55°C
−25°C
25°C
75°C
VDS = 10 V
Pulsed
10
1
0.1
125°C
150°C
175°C
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
9
8 ID = 100 A
50 A
7 20 A
6
5
4
3
2
1 Pulsed
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Page 4 of 6
4페이지 Revision History
NP100N04NUJ Data Sheet
Rev.
1.00
Date
Jun 13, 2011
Page
−
First Edition Issued
Description
Summary
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