|
|
|
부품번호 | CS64N90 기능 |
|
|
기능 | N-Channel Trench Process Power MOSFET | ||
제조업체 | Thinki Semiconductor | ||
로고 | |||
CS64N90
®
Pb Free Plating Product
CS64N90
Pb
85V,92A N-Channel Trench Process Power MOSFET
General Description
CS64N90 series is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
Features
● VDS=85V; ID=92A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 64V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application
● Amplifier Application
CS64N90
(TO-220 HeatSink)
G DS
CS64N90F
(TO-220F FullPak)
Schematic Diagram
DS
G
VDS = 85 V
CS64N90B
(TO-263/D2PAK)
ID = 92A
D
S
G
RDS(ON) = 6.2 mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD
EAS
TJ,TSTG
Maximum Power Dissipation(Tc=25℃)
Derating Factor
Single Pulse Avalanche Energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=40V,VBGB=10V,RG=25Ω
Value
85
±25
92
64.4
368
30
139
0.93
625
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/5
http://www.thinkisemi.com/
CS64N90
®
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. Output Characteristics
Figure2. Transfer Characteristics
VDS Drain-Source Voltage (V)
Figure3. Rdson Vs Drain Current
VGS Gate-Source Voltage (V)
Figure4. Rdson Vs Junction Temperature
3.0
ID- Drain Current (A)
Figure5. Gate Charge
TJ-Junction Temperature(℃)
Figure6. Source- Drain Diode Forward
Qg Gate Charge (nC)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
VSD Source-Drain Voltage (V)
Page 4/5
http://www.thinkisemi.com/
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ CS64N90.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CS64N90 | N-Channel Trench Process Power MOSFET | Thinki Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |