MRFE6S9160HR3 Datasheet PDF - Freescale Semiconductor
| Part Number | MRFE6S9160HR3 | |
| Description | RF Power Field Effect Transistors | |
| Manufacturers | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa.AnPvngee.rl,foBISram-n9ad5nwcCiedDt@hM=A818(.0P22iMlo8Ht8, zSM:yVHnDzc.D, PP=Aa2Rg8in=Vg9o, .l8ts,dB
@ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9160H
Rev. 1, 12/2008
MRFE6S9160HR3
MRFE6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9160HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
RθJC
0.31
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
1
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C16
C17
C1
B1
C18
R2
900 MHz
Rev. 2
C24
B2
C21 C22 C23
R1
C19
L1
C5
C3 C4
C6
C7 C9
C20
L2
C14
C12 C13
C8 C10 C11
C15 C2
Figure 2. MRFE6S9160HR3(SR3) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MRFE6S9160HR3 electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MRFE6S9160HR3.PDF Datasheet ] | |
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