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부품번호 | FJAFS1720 기능 |
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기능 | NPN Power Transistor | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 12 페이지수
January 2013
FJAFS1720
ESBC™ Rated NPN Power Transistor
ESBC Features (FDS8817 MOSFET)
VCS(ON)
0.304 V
IC
10 A
Equiv. RCS(ON)
0.0304 Ω
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Squared RBSOA: Up to 1700 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
Description
The FJAFS1720 is a low-cost, high-performance power
switch designed to provide the best performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1700 volts and up to 12 amps, while providing exception-
ally low on-resistance and very low switching losses.
The ESBC™ switch is designed to be driven using off-the-
shelf power supply controllers or drivers. The ESBC™
MOSFET is a low-voltage, low-cost, surface-mount
device that combines low-input capacitance and fast
switching, The ESBC™ configuration further minimizes
the required driving power because it does not have
Miller capacitance.
The FJAFS1720 provides exceptional reliability and a
large operating range due to its square reverse-bias-safe-
operating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors, so is
not prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a high-
voltage TO-3PF package.
1 TO-3PF
1.Base 2.Collector 3.Emitter
Figure 1. Pin Configuration
C2
1
B
E3
Figure 2. Internal Schematic Diagram
C
B FJAFS1720
FDS8817
G
S
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
FJAFS1720TU
Marking
J1720
Package
TO-3PF
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2012 Fairchild Semiconductor Corporation
FJAFS1720 Rev. 1.0.0
1
Packing Method
TUBE
www.fairchildsemi.com
Typical Performance Characteristics
16
IB=4.0A
14
12
10
8
IB=2.0A
IB=1.5A
IB=1.0A
6 IB=0.5A
4
I =0.2A
B
2
0
0 2 4 6 8 10
Figure 4. Static Characteristics
1
IC = 3 IB
0.1 TA = 125 o C
TA = - 25 oC
Ta = 25 o C
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE=3
100
IC = 10 IB
10
TA = 125 o C
TA = 25 oC
1 TA = -25 o C
0.1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
hFE=10
100
TA = 125oC
T = 25oC
A
10 TA = - 25oC
VCE = 5V
1
0.1 1 10 100
Figure 5. DC Current Gain
10
IC = 5 IB
1
0.1
TA = 125 o C
TA = 25 o C
TA = -25 oC
0.01
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 7. Collector-Emitter Saturation Voltage
hFE=5
100
IC = 20 IB
TA = -25 oC
10 TA = 25 o C
TA = 125 o C
1
0.1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 9. Collector-Emitter Saturation Voltage
hFE=20
© 2012 Fairchild Semiconductor Corporation
FJAFS1720 Rev. 1.0.0
4
www.fairchildsemi.com
4페이지 Test Circuits
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
sT
pj A
k|{
}
sT
}
pj A
pi
A k|{
R\G}
Figure 22. Energy Rating Test Circuit
Figure 23. fT Measurement
© 2012 Fairchild Semiconductor Corporation
FJAFS1720 Rev. 1.0.0
7
Figure 24. FBSOA
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
FJAFS1720 | NPN Power Transistor | Fairchild Semiconductor |
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