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PDF FJP2160D Data sheet ( Hoja de datos )
| Número de pieza | FJP2160D | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FJP2160D
ESBCTM Rated NPN Silicon Transistor
May 2012
Applications
• High Voltage and High Speed Power Switch
Application
• Emitter-Switched Bipolar/MOSFET Cascode
Application (ESBCTM)
• Smart Meter, Smart Breakers,
HV Industrial Power Supplies
• Motor Driver and Ignition Driver
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.131 V
IC
0.5 A
Equiv RCS(ON)
0.261 Ω ∗
• Low Equivalent On Resistance
• Very Fast Switch : 150KHz
• Squared RBSOA : Up to 1600Volts
• Avalanche Rated
• Low Driving Capacitance, no Miller Capacitance
(Typ 12pF Cap @ 200volts)
• Low Switching Losses
• Reliable HV switch : No False Triggering due to
High dv/dt Transients.
Description
The FJP2160D is a low-cost, high performance power
switch designed to provide the best performance when
used in an ESBCTM configuration in applications such as:
power supplies, motor drivers, Smart Grid, or ignition
switches. The power switch is designed to operate up to
1600 volts and up to 3amps while providing exceptionally
low on-resistance and very low switching losses.
The ESBCTM switch is designed to be easy to drive using
off-the-shelf power supply controllers or drivers. The
ESBCTM MOSFET is a low-voltage, low-cost, surface
mount device that combines low-input capacitance and
fast switching, The ESBCTM configuration further mini-
mizes the required driving power because it does not
have Miller capacitance.
The FJP2160D provides exceptional reliability and a
large operating range due to its square reverse-bias-safe-
operating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors so is
not prone to static dv/dt failures.
1 TO-220
1.Base 2.Collector 3.Emitter
C (2)
(1)
B
E (3)
C
B FJP2160D
FDC655
G
S
Figure 1. Pin Configuration Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration**
Ordering Information
Part Number
Marking
Package
FJP2160DTU
J2160D
TO-220
* Figure of Merit
** Other Fairchild MOSFETs can be used in this ESBC application.
Packing Method
TUBE
Remarks
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
2
T =25oC
J
1
0.4A
I =0.2A
C
3.0A
2.0A
1.0A
1000
100
10
C (Emitter Open)
ob
C (Emitter Grounded)
ob
0
1 10 100 1k
I [mA], BASE CURRENT
B
Figure 10. Typical Collector Saturation Voltage
250
t = 25oC L=1mH SRF=480KHz
225 a
200
175
150
125
100 hfe=5 common emitter
hfe=10 common emitter
75
50
25 hfe=5 ESBC
hfe=10 ESBC
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I [A], COLLECTOR CURRENT
C
Figure 12. Inductive Load
Collector Current Fall-time (tf)
200
t = 25oC L=1mH SRF=480KHz
180 a
160
140
120
100
hfe=10 common emitter
80
60 hfe=10 ESBC
40
20 hfe=5 common emitter
hfe=5 ESBC
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I [A], COLLECTOR CURRENT
C
Figure 14. Inductive Load
Collector Voltage Fall-time (tf)
1
1
10
100
1000
10000
COLLECTOR-BASE VOLTAGE[V]
Figure 11. Capacitance
2.0
t = 25oC L=1mH SRF=480KHz
a
1.8
hfe=10 common emitter
1.6
1.4
1.2 hfe=5 common emitter
1.0
hfe=5 ESBC
0.8
0.6
hfe=10 ESBC
0.4
0.2
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I [A], COLLECTOR CURRENT
C
Figure 13. Inductive Load
Collector Current Storage time (tstg)
300
280
t = 25oC L=1mH SRF=480KHz
a
260
240
220 hfe=5 ESBC
200
180
160
hfe=5 common emitter
140
hfe=10 common emitter
120
100
80
60 hfe=10 ESBC
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I [A], COLLECTOR CURRENT
C
Figure 15. Inductive Load
Collector Voltage Rise-time (tr)
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
5
www.fairchildsemi.com
5 Page 
Physical Dimensions
TO-220
9.90 ±0.20
(8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54TYP
[2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. A0
11
Dimensions in Millimeters
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet FJP2160D.PDF ] | |
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