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PDF FSB50760SF Data sheet ( Hoja de datos )
| Número de pieza | FSB50760SF | |
| Descripción | Motion SPM 5 module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FSB50760SF, FSB50760SFT
Motion SPM® 5 SuperFET® Series
April 2014
Features
• UL Certified No. E209204 (UL1557)
• 600 V RDS(on) = 530 mMax SuperFET MOSFET 3-
Phase with Gate Drivers and Protection
• Built-in Bootstrap Diodes Simplify PCB Layout
• Separate Open-Source Pins from Low-Side MOS-
FETS for Three-Phase Current-Sensing
• Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• Optimized for Low Electromagnetic Interference
• HVIC Temperature-Sensing Built-in for Temperature
Monitoring
• HVIC for Gate Driving and Under-Voltage Protection
• Isolation Rating: 1500 Vrms / 1 min.
• RoHS Compliant
Applications
• 3-Phase Inverter Driver for Small Power AC Motor
Drives
Related Source
• RD-402 - Reference Design for Motion SPM 5 Super-
FET Series
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• AN-9080 - User’s Guide for Motion SPM 5 Series V2
General Description
The FSB50760SF/SFT is an advanced Motion SPM® 5
module providing a fully-featured, high-performance
inverter output stage for AC Induction, BLDC and PMSM
motors such as refrigerators, fans and pumps. These
modules integrate optimized gate drive of the built-in
MOSFETs(SuperFET® technology) to minimize EMI and
losses, while also providing multiple on-module
protection features including under-voltage lockouts and
thermal monitoring. The built-in high-speed
HVIC requires only a single supply voltage and
translates the incoming logic-level gate inputs to the
high-voltage, high-current drive signals required to
properly drive the module's internal MOSFETs.
Separate open-source MOSFET terminals are available
for each phase to support the widest variety of control
algorithms.
FSB50760SF
Package Marking & Ordering Information
Device
FSB50760SF
FSB50760SFT
Device Marking
50760SF
50760SFT
Package
SPM5P-023
SPM5N-023
FSB50760SFT
Packing Type
Rail
Rail
Quantity
15
15
©2012 Fairchild Semiconductor Corporation
FSB50760SF, FSB50760SFT Rev. C6
1
www.fairchildsemi.com
1 page  
Recommended Operating Condition
Symbol
Parameter
Conditions
VPN
VCC
VBS
VIN(ON)
VIN(OFF)
tdead
Supply Voltage
Applied Between P and N
Control Supply Voltage
High-Side Bias Voltage
Input ON Threshold Voltage
Input OFF Threshold Voltage
Applied Between VCC and COM
Applied Between VB and VS
Applied Between IN and COM
Blanking Time for Preventing
Arm-Short
VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C
fPWM PWM Switching Frequency TJ 150°C
Min.
-
13.5
13.5
3.0
0
1.0
-
Typ.
300
15.0
15.0
-
-
-
20
Max.
400
16.5
16.5
VCC
0.6
-
-
Unit
V
V
V
V
V
s
kHz
Built-in Bootstrap Diode V -I Characteristic
FF
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V [V]
F
Tc=25°C
Figure 2. Built-in Bootstrap Diode Characteristics (Typical)
©2012 Fairchild Semiconductor Corporation
FSB50760SF, FSB50760SFT Rev. C6
5
www.fairchildsemi.com
5 Page 
©2012 Fairchild Semiconductor Corporation
FSB50760SF, FSB50760SFT Rev. C6
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet FSB50760SF.PDF ] | |
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