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Número de pieza | RHRP15120 | |
Descripción | Single Fast Recovery Epitaxial Diode | |
Fabricantes | Thinki Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RHRP15120 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! RHRP15120
®
RHRP15120
Pb
Pb Free Plating Product
15 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-220AC/TO-220C-2P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
RHRP15120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
Unit
VR
VRRM
IF(AV)
IF(RMS)
IFSM
PD
TJ
TSTG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module to Sink
TC=100℃
TC=100℃
TJ=45℃,t=10ms, 50Hz, Sine
Recommended(M3)
1200
15
21
150
125
-55 to +150
-55 to +125
1.1
V
A
W
℃
℃
Nm
RthJC
Weight
Junction to Case Thermal Resistance
1.0 ℃ /W
2.5 g
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
IRM Maximum Reverse Leakage Current
VR =1200V
10 μA
VR =1200V, TJ = 125℃
1 mA
VF Forward Voltage
IF=15A
IF=15A,TJ=125℃
2.8 3.2 V
2.3
trr Reverse Recovery Time (IF = 1A, dIF/dt = -200A/μs, VR = 30V)
25 30 ns
trr Reverse Recovery Time (IF = 0.5A, IR=1A, IRR = 0.25A)
35 40 ns
trr
IRRM
trr
IRRM
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Time
Maximum Reverse Recovery Current
IF =15A,VR =600V,
dIF/dt = -200A/μs
IF = 15A,VR =600V,
dIF/dt = -200A/μs ,TJ=125℃
72
5
240
7.5
ns
A
ns
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet RHRP15120.PDF ] |
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