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PDF MMBT7002K Data sheet ( Hoja de datos )
| Número de pieza | MMBT7002K | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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MMBT7002K
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low on resistance RDS(ON)
• Low gate threshold voltage
• Low input capacitance
• ESD protected up to 2KV
Drain
Gate
Source
1.Gate 2.Source 3.Drain
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulse Width ≤ 10 µs)
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Drain Source Breakdown Voltage
at ID = 10 µA
Zero Gate Voltage Drain Current
at VDS = 60 V
Gate-Source Leakage Current
at VGS = ± 20 V
Gate Threshold Voltage
at VDS = 10 V, ID = 250 µA
Static Drain-Source On-Resistance
at VGS = 10 V, ID = 500 mA
at VGS = 5 V, ID = 50 mA
Forward Transconductance
at VDS = 10 V, ID = 200 mA
Input Capacitance
at VDS = 25 V, f = 1 MHz
Output Capacitance
at VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at VDS = 25 V, f = 1 MHz
Symbol
VDSS
VGSS
ID
IDM
Ptot
TJ, Ts
Value
60
± 20
300
800
350
- 55 to + 150
Unit
V
V
mA
mA
mW
OC
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gfs
Ciss
Coss
Crss
Min.
60
-
-
1
-
-
80
-
-
-
Max.
-
1
± 10
2.5
2
3
-
50
25
5
Unit
V
µA
µA
V
Ω
mS
pF
pF
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 04/04/2008
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT7002K.PDF ] | |
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