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부품번호 | CRS11 기능 |
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기능 | Schottky Barrier Rectifier ( Diode ) | ||
제조업체 | Toshiba | ||
로고 | |||
전체 5 페이지수
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS11
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.36 V (max)
• Average forward current: IF (AV) = 1.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
CRS11
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM 30 V
Average forward current
IF(AV)
1.0 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
IFSM
Tj
20 (50 Hz)
−40~125
A
°C
JEDEC
―
Storage temperature
Tstg
−40~150
°C
JEITA
―
Note 1: Tℓ = 98.7°C: Rectangular waveform (α = 180°), VR = 15 V
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
Symbol
VFM (1)
VFM (2)
VFM (3)
IRRM (1)
IRRM (2)
Cj
Rth (j-a)
Rth (j-ℓ)
Test Condition
Min
IFM = 0.1 A
IFM = 0.7 A
IFM = 1.0 A
VRRM = 5 V
VRRM = 30 V
VR = 10 V, f = 1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.20
0.30
0.32
0.06
0.6
60
⎯
⎯
⎯
Max Unit
⎯
⎯V
0.36
⎯
mA
1.5
⎯ pF
70
°C/W
140
20 °C/W
1 2006-11-13
Surge forward current
(non-repetitive)
28
Ta = 25°C
24 f = 50 Hz
20
16
12
8
4
0
1 10 100
Number of cycles
1000
Pulse test
IR – Tj
(typ.)
100
VR = 30 V
10
20 V
1 15 V
10 V
0.1 5 V
0.01
0
20 40 60 80 100 120 140 160
Junction temperature Tj (°C)
CRS11
1000
Cj – VR
(typ.)
f = 1 MHz
Ta = 25°C
100
10
1 10 100
Reverse voltage VR (V)
PR (AV) – VR
4.8
Rectangular waveform
4.4 0° 360°
4.0
(typ.)
3.6 VR α
3.2
2.8
Conduction angle: α
Tj = 125°C
2.4
DC
300°
240°
2.0
180°
1.6
120°
1.2 60°
0.8
0.4
0.0
0 10 20 30
Reverse voltage VR (V)
4 2006-11-13
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
CRS100 | Diode (spec sheet) | American Microsemiconductor |
CRS10I30A | Schottky Barrier Rectifier ( Diode ) | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |