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PDF Si4435 Data sheet ( Hoja de datos )
| Número de pieza | Si4435 | |
| Descripción | P-Channel Enhancement MOSFET | |
| Fabricantes | Nanxin | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de Si4435 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Features
·Low On resistance.
·-4.5V drive.
·RoHS compliant.
Si4435
P-Channel Enhancement MOSFET
Si4435
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
Allowable Power Dissipation
PD
Total Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Conditions
PW≤10uS, duty cycle≤1%
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
-30
+20
-8
-50
1.3
1.7
150
-55~+150
Unit
V
V
A
A
W
W
0C
0C
Electrical Characteristics at Ta=250C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(ON)
RDS(ON)
Ciss
Coss
Crss
Conditions
ID=-250uA, VGS=0V
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
VDS= VGS, ID=-250uA
VDS=-5V, ID=-10A
ID=-8A, VGS=-10V
ID=-7A, VGS=-4.5V
VDS=-15V, VGS=0V, f=1MHz
VDS=-15V, VGS=0V, f=1MHz
VDS=-15V, VGS=0V, f=1MHz
Ratings
min typ max
-30
-10
+100
-1.0 -1.5 -3.0
24
15 20
20 35
Unit
V
uA
nA
V
S
mΩ
mΩ
pF
pF
pF
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet Si4435.PDF ] | |
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