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35N60C3 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 35N60C3
기능 SPW35N60C3
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35N60C3 데이터시트, 핀배열, 회로
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Product Summary
V DS @ T j,max
R DS(on),max
ID
SPW35N60C3
650 V
0.1
34.6 A
PG-TO247
Type
SPW35N60C3
Package
PG-TO247
Ordering Code
Q67040-S4673
Marking
35N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=17.3 A, V DD=50 V
E AR I D=34.6 A, V DD=50 V
I AR
Drain source voltage slope
dv /dt
I D=34.6 A,
V DS=480 V, T j=125 °C
Value
34.6
21.9
103.8
1500
1.5
34.6
50
Unit
A
mJ
A
V/ns
Gate source voltage
Power dissipation
Operating and storage temperature
Reverse diode dv/dt 6)
V GS static
V GS AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
dv/dt
±20
±30
313
-55 ... 150
15
V
W
°C
V/ns
Rev. 2.5
Page 1
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A




35N60C3 pdf, 반도체, 판매, 대치품
Parameter
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol Conditions
IS
I S,pulse
V SD
t rr
Q rr
I rrm
T C=25 °C
V GS=0 V, I F=34.6 A,
T j=25 °C
V R=480 V, I F=I S,
di F/dt =100 A/µs
SPW35N60C3
min.
Values
typ.
Unit
max.
- - 34.6 A
- - 103.8
- 0.95 1.2 V
- 600 - ns
- 21 - µC
- 90 - A
Typical Transient Thermal Characteristics
Symbol Value
Unit Symbol
typ.
R th1
R th2
R th3
R th4
R th5
0.00441
0.00608
0.0341
0.0602
0.0884
K/W
C th1
C th2
C th3
C th4
C th5
C th6
Value
typ.
0.00037
0.00223
0.00315
0.0179
0.098
4.45)
Unit
Ws/K
5) C th6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
R thCA=0 K/W.
Rev. 2.5
Page 4
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A

4페이지










35N60C3 전자부품, 판매, 대치품
9 Typ. gate charge
V GS=f(Q gate); I D=34.6 A pulsed
parameter: V DD
12
SPW35N60C3
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
10
8
120 V
480 V
6
25 °C
25 °C, 98%
102 150 °C, 98%
150 °C
101
4
100
2
0
0 50
11 Avalanche SOA
I AR=f(t AR)
parameter: T j(start)
40
100
Q gate [nC]
150
10-1
200 0 0.5 1 1.5 2 2.5
V SD [V]
12 Avalanche energy
E AS=f(T j); I D=17.3 A; V DD=50 V
1600
30 1200
20 800
125 °C
25 °C
10 400
0
10-3
10-2
10-1
100
101
102
103
t AR [µs]
0
20 60 100 140 180
T j [°C]
Rev. 2.5
Page 7
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A

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