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PDF 35N60C3 Data sheet ( Hoja de datos )
| Número de pieza | 35N60C3 | |
| Descripción | SPW35N60C3 | |
| Fabricantes | Infineon | |
| Logotipo |  |
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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Product Summary
V DS @ T j,max
R DS(on),max
ID
SPW35N60C3
650 V
0.1 Ω
34.6 A
PG-TO247
Type
SPW35N60C3
Package
PG-TO247
Ordering Code
Q67040-S4673
Marking
35N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=17.3 A, V DD=50 V
E AR I D=34.6 A, V DD=50 V
I AR
Drain source voltage slope
dv /dt
I D=34.6 A,
V DS=480 V, T j=125 °C
Value
34.6
21.9
103.8
1500
1.5
34.6
50
Unit
A
mJ
A
V/ns
Gate source voltage
Power dissipation
Operating and storage temperature
Reverse diode dv/dt 6)
V GS static
V GS AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
dv/dt
±20
±30
313
-55 ... 150
15
V
W
°C
V/ns
Rev. 2.5
Page 1
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
1 page  
1 Power dissipation
P tot=f(T C)
400
300
200
100
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
102
SPW35N60C3
1 µs
10 µs
100 µs
101
DC 1 ms
10 ms
100
0
0 40 80 120
T C [°C]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
parameter: D=t p/T
100
10-1
160 100
101 102
V DS [V]
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
20 V
7V
6.5 V
103
0.5
10-1
0.2
0.1
0.05
10-2 0.02
0.01
single pulse
80
60
40
20
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
0
0
6V
5.5 V
5V
4.5 V
4V
5 10 15
V DS [V]
20
Rev. 2.5
Page 5
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
5 Page 
SPW35N60C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any
typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon Technologies
Office. Infineon Technologies components may be used in life-support devices or
systems only with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Rev. 2.5
Page 11
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 35N60C3.PDF ] | |
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