DataSheet.es    


PDF PZT3904 Data sheet ( Hoja de datos )

Número de pieza PZT3904
Descripción General Purpose Transistor
Fabricantes SeCoS 
Logotipo SeCoS Logotipo



Hay una vista previa y un enlace de descarga de PZT3904 (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! PZT3904 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
RoHS Compliant Product
PZT3904
NPN Silicon
General Purpose Transistor
C
FEATURES
Power dissipation
C
B
P CM : 1 W˄Tamb=25ć˅
Collector current
I CM : 0.2 A
Collector-base voltage
V (BR)CBO : 6 0 V
Operating and storage junction temperature range
T JˈTstg: -55ć to +150ć
ELECTRICAL CHARACTERISTICS (Tamb=25Я
E
unless
SOT-223

1. BASE
2. COLLECTOR
3. EMITTER
f 
f
5
5

efe
efe
efe


f 
123
otherwise specified)
Unit : mm
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
V(BR)CBO Ic=10µA,IE=0
60 V
V(BR)CEO Ic=1mA,IB=0
40 V
V(BR)EBO IE=10µA,IC=0
6V
ICBO
VCB=60V,IE=0
0.1 µA
IEBO VEB=5V,IC=0
0.1 µA
hFE(1) VCE=10V,IC=0.1mA
40
hFE(2) VCE=1V,IC=1mA
70
hFE(3) VCE=1V,IC=10mA
100 300
hFE(4) VCE=1V,IC=50mA
60
hFE(5) VCE=1V,IC=100mA
30
VCE(sat) IC=10mA,IB=1mA
0.2 V
VCE(sat) IC=50mA,IB=5mA
0.3 V
VBE(sat) IC=10mA,IB=1mA
0.65
0.85
V
VBE(sat) IC=50mA,IB=5mA
0.95
V
fT VCE=20V,IC=10mA,f=100MHz
300
MHz
Cob VCB=5V,IE=0,f=1MHz
VCE=5V,Ic=0.1mA,
NF
f=10HZ to 15.7KHz,Rg=1Kȍ
4 pF
5 dB
td VCC=3V,
35 nS
tr IC=10mA,VBE(off)=0.5V,IB1=1mA
35 nS
tS VCC=3V, IC=10mA
200 nS
tf IB1= IB2= 1mA
50 nS
Any changing of specification will not be informed individual
Page 1 of 5

1 page




PZT3904 pdf
Elektronische Bauelemente
PZT3904
NPN Silicon
General Purpose Transistor
1.0
0.8
0.6
0.4
0.2
0
0.01
IC = 1.0 mA
10 mA
30 mA
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, Base Current (mA)
Figure 16. Collector Saturation Region
TJ = 25°C
100 mA
2.0 3.0
5.0 7.0 10
1.2
TJ = 25°C
1.0
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
0.2
0
1.0 2.0
5.0 10 20
50 100 200
IC, Collector Current (mA)
Figure 17. “ON” Voltages
1.0
0.5 +25°C TO +125°C
VC FOR VCE(sat)
0 – 55°C TO +25°C
– 0.5
– 1.0
– 1.5 VB FOR VBE(sat)
– 55°C TO +25°C
+25°C TO +125°C
– 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, Collector Current (mA)
Figure 18. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 5 of 5

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet PZT3904.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
PZT3904NPN switching transistorNXP Semiconductors
NXP Semiconductors
PZT3904SMALL SIGNAL NPN TRANSISTORSTMicroelectronics
STMicroelectronics
PZT3904NPN Silicon Switching TransistorSiemens Semiconductor Group
Siemens Semiconductor Group
PZT3904NPN General Purpose AmplifierFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar