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Datasheet BDW93B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDW93B | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDW93/A/B/C
DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW94/A/B/C
APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications
PINNING PIN 1 2 3
DESCRIPTION
Base Collec |  SavantIC | transistor |
| 2 | BDW93B | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDW93B/BDW93C BDW94B/BDW94C
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are inten |  SGS-THOMSON | transistor |
| 3 | BDW93B | Darlington Transistors Darlington Transistors
BDW93, BDW94 Series
Features:
Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B
100 V (Minimum) - BDW93C, BDW94C • Collector-emitter saturation voltage-VCE (sat) |  Multicomp | transistor |
| 4 | BDW93B | Hammer Drivers/ Audio Amplifiers Applications BDW93/A/B/C
BDW93/A/B/C
Hammer Drivers, Audio Amplifiers Applications
• Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCB |  Fairchild Semiconductor | amplifier |
| 5 | BDW93B | POWER TRANSISTORS(12A/45-100V/80W) A
A
A
A
|  Mospec Semiconductor | transistor |
BDW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDW21 | Bipolar NPN Device BDW21
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max  Seme LAB data | | |
| 2 | BDW21C | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BDW21C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma Seme LAB data | | |
| 3 | BDW22 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package BDW22
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 4 | BDW23 | NPN SILICON POWER DARLINGTONS BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at  Power Innovations Limited data | | |
| 5 | BDW23 | Hammer Drivers/ Audio Amplifiers Applications BDW23/A/B/C
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers Applications
• Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCB Fairchild Semiconductor amplifier | | |
| 6 | BDW23A | Hammer Drivers/ Audio Amplifiers Applications BDW23/A/B/C
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers Applications
• Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCB Fairchild Semiconductor amplifier | | |
| 7 | BDW23A | NPN SILICON POWER DARLINGTONS BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at Power Innovations Limited data | |
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