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MUSES02 데이터시트 PDF




New Japan Radio에서 제조한 전자 부품 MUSES02은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MUSES02 자료 제공

부품번호 MUSES02 기능
기능 Dual Operational Amplifier
제조업체 New Japan Radio
로고 New Japan Radio 로고


MUSES02 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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MUSES02 데이터시트, 핀배열, 회로
MUSES02
High Quality Audio, Bipolar Input,
Dual Operational Amplifier
The MUSES02 is a dual bipolar input high quality audio operational amplifier, which is optimized for high-end audio and
professional audio applications with advanced circuitry and layout, unique material and assembled technology by
skilled-craftwork.
It is the best for audio preamplifiers, active filters, and line amplifiers with excellent sound.
FEATURES
Operating Voltage
Output noise
Input Offset Voltage
Input Bias Current
Voltage Gain
Slew Rate
Bipolar Technology
Package Outline
Vopr = 3.5V to 16V
4.5nV/Hz at f=1kHz
0.3mV typ. 3mV max.
100nA typ. 500nA max. at Ta=25°C
110dB typ.
5V/s typ.
DIP8
PIN CONFIGURATION
1
2 -+
3 +-
4
PIN FUNCTION
8 1. A OUTPUT
2. A -INPUT
7 3. A +INPUT
4. V-
6 5. B +INPUT
5
6. B -INPUT
7. B OUTPUT
8.V+
PACKAGE OUTLINE
MUSES02
Ver.2015-04-13
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
-1-




MUSES02 pdf, 반도체, 판매, 대치품
MUSES02
Application Notes
Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation PD. The dependence of the MUSES02 PD on ambient temperature is shown in Fig 1. The plots are
depended on following two points. The first is PD on ambient temperature 25°C, which is the maximum power dissipation.
The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature
Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD
lower than 25°C to it on 25°C. The PD is shown following formula as a function of the ambient temperature between those
points.
Dissipation Power PD =
Tjmax - Ta
ja
[W] (Ta=25°C to Ta=150°C)
Where, ja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on MUSES02 is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage VDD) X (Supply Current IDD) – (Output Power Po)
The MUSES02 should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
PD [mW]
DIP8
910
Ta [deg]
-40 25 85 150
(Topr max.) (Tstg max.)
Fig.1 Power Dissipations vs. Ambient Temperature on the MUSES02
-4-
Ver.2015-04-13

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MUSES02 전자부품, 판매, 대치품
Transient Response (Temperature)
V+/V-=±16V,VIN=2VP-P,f=100kHz
PulseEdge=10nsec,Gv=0dB,CL=10p,RL=2k
6
5 Input Voltage
2
1
40
3 -1
2 Ta=25°C
85°C
1 -40°C
-2
-3
0 -4
-1 -5
Output Voltage
-2 -6
-2 -1 0 1 2 3 4 5 6 7 8 9
Time [μsec]
Transient Response (Temperature)
V+/V-=±15V,VIN=2VP-P,f=100kHz
PulseEdge=10nsec,Gv=0dB,CL=10p,RL=2k
6
Input Voltage
5
2
1
40
3
2
Ta=25°C
85°C
1 -40°C
-1
-2
-3
0 -4
-1 -5
Output Voltage
-2 -6
-2 -1 0 1 2 3 4 5 6 7 8 9
Time [μsec]
Transient Response (Temperature)
V+/V-=±3.5V,VIN=2VP-P,f=100kHz
PulseEdge=10nsec,Gv=0dB,CL=10p,RL=2k
6
Input Voltage
5
2
1
40
3
2
Ta=25°C
85°C
1 -40°C
-1
-2
-3
0 -4
-1 -5
Output Voltage
-2 -6
-2 -1 0 1 2 3 4 5 6 7 8 9
Time [μsec]
Ver.2015-04-13
MUSES02
Slew Rate vs. Temperature
V+/V-=±16V,VIN=2VP-P,f=100kHz
PulseEdge=10nsec,Gv=0dB,CL=10p,RL=2k
6
Fall
5
4
Rise
3
2
1
0
-50 -25
0 25 50 75 100 125 150
Temperature [°C]
Slew Rate vs. Temperature
V+/V-=±15V,VIN=2VP-P,f=100kHz
PulseEdge=10nsec,Gv=0dB,CL=10p,RL=2k
6
Fall
5
4
Rise
3
2
1
0
-50 -25
0 25 50 75 100 125 150
Temperature [°C]
Slew Rate vs. Temperature
V+/V-=±3.5V,VIN=2VP-P,f=100kHz
PulseEdge=10nsec,Gv=0dB,CL=10p,RL=2k
6
5 Fall
4
3 Rise
2
1
0
-50 -25
0 25 50 75 100 125 150
Temperature [°C]
-7-

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