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DMT6004SCT 데이터시트 PDF




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부품번호 DMT6004SCT 기능
기능 N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT6004SCT 데이터시트, 핀배열, 회로
DMT6004SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) max
3.65mΩ @ VGS = 10V
ID
TC = +25°C
(Note 9)
100A
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO220-3
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220-3
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT6004SCT
Case
TO220-3
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T6004S
YYWW
= Manufacturer’s Marking
T6004S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 15 = 2015)
WW or WW = Week Code (01 to 53)
DMT6004SCT
Document number: DS38565 Rev. 1 - 2
1 of 6
www.diodes.com
April 2016
© Diodes Incorporated




DMT6004SCT pdf, 반도체, 판매, 대치품
0.006
0.005
0.004
VGS = 10V, ID = 100A
0.003
VGS = 10V, ID = 20A
0.002
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 7 On-Resistance Variation with Temperature
160
VGS = 0V
140
120
100
TA = 150oC
80
TA = 125oC
60 TA = 85oC
40 TA = 25oC
TA = -55oC
20
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
VDS = 30V
ID = 90A
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMT6004SCT
3.2
3
2.8
2.6
ID = 1mA
2.4
2.2
2 ID = 250µA
1.8
1.6
1.4
1.2
1
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8 Gate Threshold Variation vs.
Temperature
10000
Ciss
1000
C oss
100 Crss
f = 1MHz
10
0 5 10 15 20 25 30 35 40
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
1000
100
RDS(ON)
Limited
DC
10 PW =100ms
PW =10ms
1
0.1
0.01
PW =1ms
TTJJ((MMaaxx))==115500℃℃
TTCC==2255℃℃
SSiinnggllee PPuullssee
PPWW ==110000µµss
PW =10µs
DDUUTT oonn IInnffiinniittee HHeeaattssiinnkk
VVGGSS==1100VV
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMT6004SCT
Document number: DS38565 Rev. 1 - 2
4 of 6
www.diodes.com
April 2016
© Diodes Incorporated

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DMT6004SCT

N-CHANNEL ENHANCEMENT MODE MOSFET

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