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PDF DMTH4007SPSQ Data sheet ( Hoja de datos )
| Número de pieza | DMTH4007SPSQ | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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Green DMTH4007SPSQ
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
40V
RDS(ON) Max
7.6mΩ @ VGS = 10V
ID Max
TC = +25°C
(Note 10)
100A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Power Management
DC-DC Converters
Motor Control
Features
Rated to +175°C – Ideal for High Ambient Temperature
Environments
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI®5060-8
Top View
Pin1
Bottom View
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMTH4007SPSQ-13
Case
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_ compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPSQ
Document number: DS38160 Rev. 1 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated
1 page  
DMTH4007SPSQ
0.01
0.009
0.008
0.007
0.006
VGS=10V, ID=20A
0.005
0.004
0.003
0.002
0.001
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
25 VGS=0V, TA=125℃
20 VGS=0V, TA=150℃
15 VGS=0V, TA=175℃
VGS=0V, TA=85℃
10
VGS=0V, TA=25℃
5
VGS=0V, TA=-55℃
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
4
3.5
3
2.5 ID=1mA
2
ID=250μA
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
10000
f=1MHz
Ciss
1000
Coss
100 Crss
10
0
5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
1000
R DS(on)
Limited
100
PW = 1µs
6 VDS=30V, ID=20A
4
2
0
0 5 10 15 20 25 30 35 40 45
Qg,TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPSQ
Document number: DS38160 Rev. 1 - 2
5 of 8
www.diodes.com
PW = 1s
PW = 100ms
10 PW = 10ms
PW = 1ms
PW = 100µs
1 TJ(m ax) = 175°C
TC = 25°C
PW = 10µs
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
.1.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
November 2015
© Diodes Incorporated
5 Page | ||
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