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부품번호 | 1SS412 기능 |
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기능 | Silicon Epitaxial Planar Type Diode | ||
제조업체 | Toshiba | ||
로고 | |||
전체 3 페이지수
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS412
General-Purpose Rectifier Applications
1SS412
Unit: imm
z Low forward voltage
z Low reverse current
z Small total capacitance
z Small package
: VF = 1.0 V (typ.)
: IR = 0.1 nA (typ.)
: CT = 3.0 pF (typ.)
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
IFM
IO
IFSM
P
300 *
100 *
1*
100
mA
mA
A
mW
Junction temperature
Storage temperature range
Tj 150 °C JEDEC
Tstg −55 to 150 °C JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-2P1C
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
(between cathode and anode)
Symbol
VF
IR
CT
Test
Circuit
Test Condition
― IF = 100 mA
― VR = 80 V
― VR = 0, f = 1 MHz
Min Typ. Max Unit
― 1.0 1.3 V
― 0.1 10 nA
― 3.0 ― pF
Equivalent Circuit (Top View)
Marking
P9
Start of commercial production
2002-08
1 2014-03-01
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구 성 | 총 3 페이지수 | ||
다운로드 | [ 1SS412.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
1SS412 | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |