|
|
PDF 1SS416 Data sheet ( Hoja de datos )
| Número de pieza | 1SS416 | |
| Descripción | Silicon Epitaxial Planar Type Diode | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 1SS416 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416
1SS416
High Speed Switching Application
z Small package
z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
0.6±0.05
Unit: mm
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Symbol
VRM
Rating
35
Unit
V
0.2
±0.05
0.07 M A
0.1±0.05
Reverse voltage
VR 30 V
Maximum (peak) forward current IFM 200 mA
0.48
+0.02
-0.03
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
1A
Power dissipation
P * 100 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
−55∼125
°C
fSC
Operating temperature range
Topr
−40∼100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.6mg(typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR(1)
IR(2)
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 5mA
― IF = 100mA
― VR = 10V
― VR = 30V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.38 0.50
― ― 20
μA
― ― 50
― 15 ― pF
Equivalent Circuit (Top View)
Marking
W
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS416.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1SS412 | Silicon Epitaxial Planar Type Diode | Toshiba |
| 1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |  SEMTECH |
| 1SS413 | Schottky Barrier Diode | Toshiba |
| 1SS413CT | Schottky Barrier Diode | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |