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PDF 1SS416CT Data sheet ( Hoja de datos )
| Número de pieza | 1SS416CT | |
| Descripción | Silicon Epitaxial Planar Type Diode | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416CT
1SS416CT
High Speed Switching Application
z Small package
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
0.6±0.05
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P*
35 V
30 V
200 mA
100 mA
1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
CST2
JEDEC
―
JEITA
―
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR(1)
IR(2)
CT
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 5 mA
― IF = 100 mA
― VR = 10 V
― VR = 30 V
― VR = 0 V, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.38 0.50
― ― 20
μA
― ― 50
― 15 ― pF
1 2009-01-08
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1SS416CT.PDF ] | |
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