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Número de pieza | 1SS418 | |
Descripción | Silicon Epitaxial Planar Type Diode | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS418 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS418
High Speed Switching Application
• Low forward voltage
: VF (3) = 0.23V (typ.)@ IF = 5mA
1SS418
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
VRM
VR
35 V
30 V sESC
Maximum (peak) forward current IFM 200 mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P*
100 mA
1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 ~ 125
°C
Operating temperature range
Topr −40 ~ 100 °C JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011g(Typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 5mA
― IF = 100mA
― VR = 10V
― VR = 30V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.38 0.50
― ― 20 μA
― ― 50 μA
― 15 ― pF
Equivalent Circuit (Top View)
Marking
W
1 2007-11-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS418.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS412 | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
1SS413 | Schottky Barrier Diode | Toshiba |
1SS413CT | Schottky Barrier Diode | Toshiba |
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