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PDF 1SS418 Data sheet ( Hoja de datos )

Número de pieza 1SS418
Descripción Silicon Epitaxial Planar Type Diode
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! 1SS418 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS418
High Speed Switching Application
Low forward voltage
: VF (3) = 0.23V (typ.)@ IF = 5mA
1SS418
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
VRM
VR
35 V
30 V sESC
Maximum (peak) forward current IFM 200 mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P*
100 mA
1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 ~ 125
°C
Operating temperature range
Topr 40 ~ 100 °C JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
1-1K1A
Weight: 0.0011g(Typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
IR
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 5mA
IF = 100mA
VR = 10V
VR = 30V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.18
0.23
V
0.38 0.50
― ― 20 μA
― ― 50 μA
15 pF
Equivalent Circuit (Top View)
Marking
W
1 2007-11-01

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