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Número de pieza | 1SS423 | |
Descripción | Silicon Epitaxial Planar Type Diode | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS423 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS423
Ultra-High-Speed Switching Applications
• Small package
• Low forward voltage: VF (3) = 0.56 V (typ.)
• Low reverse current: IR = 5 μA (max)
1SS423
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
VR
IFM
IO
IFSM
P
40
200*
100*
1*
100*
V
mA
mA
A
mW
1.ANODE1
2.CATHODE2
3.CATHODE1
ANODE2
Junction temperature
Tj 125 °C JEDEC
―
Storage temperature range
Tstg
−55~125
°C JEITA
―
Operating temperature range
Topr
−40~100
°C
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
1-2S1C
Weight: 0.0024 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the absolute maximum rating for a single diode . Where two diodes are used,
the absolute maximum rating per diode is 75% that for the single diode.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
(between cathode and anode)
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
― 0.56 0.62
V
― ― 5 μA
― 15 ― pF
Marking
W9
1 2007-11-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS423.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS420 | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS420CT | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS421 | Silicon Epitaxial Planar Type Diode | Toshiba |
1SS422 | High speed Switching Diode | Galaxy Semi-Conductor |
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