(PDF) 1SS420 Datasheet - Silicon Epitaxial Planar Type Diode

Número de pieza	1SS420
Descripción	Silicon Epitaxial Planar Type Diode
Fabricantes	Toshiba
Logotipo
Hay una vista previa y un enlace de descarga de 1SS420 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low reverse current: IR = 5 µA (max) 1SS420 Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage VRM 35 Reverse voltage VR 30 Maximum (peak) forward current IFM 300 Average forward current IO 200 Surge current (10 ms) IFSM 1 Power dissipation P * 150 Junction temperature Tj 125 Storage temperature range Tstg −55~125 Operating temperature range Topr −40~100 * Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Unit V V mA mA A mW °C °C °C JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Circuit Test Condition ― IF = 1 mA ― IF = 10 mA ― IF = 200 mA ― VR = 30 V ― VR = 0, f = 1 MHz Equivalent Circuit (Top View) Marking Min Typ. Max Unit ― 0.29 ― ― 0.36 ― ― 0.52 0.6 ―― 5 ― 20 ― V µA pF S6 1 2005-03-23 1 page

Páginas	Total 3 Páginas
PDF Descargar	[ Datasheet 1SS420.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF 1SS420 Data sheet ( Hoja de datos )