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PDF 2CL3512H Data sheet ( Hoja de datos )
| Número de pieza | 2CL3512H | |
| Descripción | High Voltage Diodes | |
| Fabricantes | SiPower | |
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Power Semiconductor Technology
High Voltage Silicon Diodes
2CL3512H
High voltage silicon diodes
Features
Iz F（AV）
350mA
z VRRM
20kV
z High reliability
Applications
Rectification for high voltage power supply of
magnetron in Micro wave oven and others
Primary characteristics
IF(AV)
VRRM
IFSM
IRM
VFM
TJ max.
350mA
20kV
30A
5uA
12V
130 oC
Mechanical data
z Case: Molded Plastic Body
z Epoxy meets UL 94V-0 flammability rating
z Terminals: Pure tin plated leads, solderable
per J-STD-002 and JESD22-B102, E3 suffix
for consumer grade, meet JESD201 class
1A whisker test.
Polarity: Color band denotes cathode end
Maximum rating (Ta=25oC unless otherwise noted)
Parameter
Sym
bol
2CL3512H
Unit
Maximum recurrent peak reverse voltage
VRRM 20 KV
Maximum RMS voltage
VRMS 14 KV
Average forward current
60HZ half-sine wave,
Resistance load, Ta≤60℃
IF(AV)
350 mA
Forward surge current
60HZ half-sine wave,
1cycle,Ta=25℃
IFSM
30
A
Reverse surge current
WP=1ms, Rectangular-wave,
One-shot, Ta=25℃
IRSM
100 mA
Peak forward voltage
IFM=350mA
VFM ≤12 V
Peak reverse current
VRM=VRRM
IRRM1 ≤5 μA
Virtual junction temperature
T(vj) 130 ℃
Storage temperature
Tstg
-40 ~ +130
℃
Notes: Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm×50mm×0.6mm
Wind-cooled velocity is more than 0.5m/s
Rev. A1
SiPower - The official marketing arm of Zhonghuan Semiconductor
http://www.sipower.us
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