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9NM60N PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 9NM60N
기능 STD9NM60N
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9NM60N 데이터시트, 핀배열, 회로
STD9NM60N
STF9NM60N, STP9NM60N
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK
MDmesh™ II Power MOSFET
Features
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
VDSS
(@Tjmax)
RDS(on)
max.
650 V < 0.745 Ω
ID
6.5 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
Marking
9NM60N
Packages
DPAK
TO-220FP
TO-220
!-V
Packaging
Tape and reel
Tube
October 2010
Doc ID 18063 Rev 1
1/16
www.st.com
16




9NM60N pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STD9NM60N, STF9NM60N, STP9NM60N
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1 mA, VGS = 0
VDS = max rating
VDS = max rating, @125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.25 A
600 V
1 µA
100 µA
100 nA
2 3 4V
0.63 0.745 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
452 pF
- 30 - pF
1.45 pF
Coss
(1)
eq.
Equivalent output
catacitance
VGS = 0, VDS = 0 to 480 V
- 79 - pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDD = 480 V, ID = 6.5 A,
VGS = 10 V,
(see Figure 18)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
17.4 nC
- 3 - nC
9.7 nC
- 4.8 - Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/16 Doc ID 18063 Rev 1

4페이지










9NM60N 전자부품, 판매, 대치품
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics
Figure 8. Output characteristics
ID
(A) VGS=10V
12
Figure 9.
AM08165v1
ID
(A)
12
Transfer characteristics
VDS=20V
AM08166v1
10
6V
8
6
4
5V
2
0
0 5 10 15 20 25 30 VDS(V)
10
8
6
4
2
0
0 2 4 6 8 10 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
VGS
(V)
VDS
12
10
8
6
4
2
VDD=480V
ID=6.5A
AM08167v1
VGS
500
400
300
200
100
RDS(on)
(Ω)
0.66
0.65
0.64
0.63
0.62
0.61
0.60
VGS=10V
AM08168v1
00
0 5 10 15 20 Qg(nC)
0.59
0 1 2 3 4 5 6 ID(A)
Figure 12. Capacitance variations
C
(pF)
1000
100
10
1
0.1 1
10 100
Figure 13. Output capacitance stored energy
AM08169v1
Eoss
(µJ)
3.5
AM08170v1
Ciss
3
2.5
2
Coss
1.5
1
Crss
VDS(V)
0.5
0
0 100 200 300 400 500 600 VDS(V)
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