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PDF XB1008-QT Data sheet ( Hoja de datos )
| Número de pieza | XB1008-QT | |
| Descripción | Buffer Amplifier | |
| Fabricantes | MA-COM | |
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XB1008-QT
Buffer Amplifier
10 - 21 GHz
Features
Excellent Transmit LO/Output Buffer Stage
17 dB Small Signal Gain
20 dBm Psat
32 dBm Output IP3
4.5 dB Noise Figure
Variable Gain with Adjustable Bias
100% RF, DC and Output Power Testing
Lead-Free 3 mm 16-Lead QFN Package
RoHS* Compliant
Description
The XB1008-QT is a two stage 10 - 21 GHz GaAs
MMIC buffer amplifier that has a small signal gain of
17 dB with a 18 dBm P1dB output compression
point. The device also provides variable gain
regulation with adjustable bias.
The device is ideally suited as an LO or RF buffer
stage with broadband performance at a very low
cost. The device comes in an RoHS compliant 3 mm
QFN surface mount package offering excellent RF
and thermal properties. This device is specifically
designed for use in PtP radio applications and is well
suited for other telecom applications such as
SATCOM and VSAT.
Ordering Information1
Part Number
Package
XB1008-QT-0G0T
tape and reel
XB1008-QT-EV1
evaluation module
1. Reference Application Note M513 for reel size information.
Functional Block Diagram
GND GND GND VD
16 15 14 13
Rev. V2
GND
GND
RFIN
GND
1
2
3
4
12 GND
11 GND
10 RFOUT
9 GND
5678
VG GND GND GND
Pin Configuration
Pin No.
Function
1-2, 4, 6-9, 11, 12, 14-16
Ground
3 RF Input
5 Gate Bias
10 RF Output
13
Paddle2
Drain Bias
Ground
2. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1 page  
XB1008-QT
Buffer Amplifier
10 - 21 GHz
Rev. V2
App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity
performance, it is recommended to bias this device at VD = 4 V with ID = 90 mA. It is also recommended to use
active biasing to control the drain currents because this gives the most reproducible results over temperature or
RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the
drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and
thus drain voltage. The typical gate voltage needed to do this is -0.5 V. Typically the gate is protected with silicon
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias
is available before applying the positive drain supply.
Lead-Free Package Dimensions/Layout†
† Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet XB1008-QT.PDF ] | |
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