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PDF XR1008-QB Data sheet ( Hoja de datos )
| Número de pieza | XR1008-QB | |
| Descripción | Receiver | |
| Fabricantes | MA-COM | |
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XR1008-QB
Receiver
35 - 45 GHz
Features
Sub-harmonic, Image Reject Receiver
Integrated LNA, Image Reject Mixer, LO Doubler/
Buffer
+2.0 dBm LO Drive Level
10.0 dB Conversion Gain
3.5 dB NF
+5.0 dBm Input Third Order Intercept (IIP3)
Lead-Free 7mm 28-lead SMD Package
100% RF and DC Testing
RoHS* Compliant and 260°C Reflow Compatible
Description
The XR1008-QB is a 35.0-45.0 GHz packaged
receiver that has a noise figure of 3.5 dB and 5.0
dBm Input Third Order Intercept across the band.
This device integrates a three stage LNA followed by
an image reject resistive pHEMT mixer and includes
an integrated LO doubler and buffer amplifier. The
use of integrated LO doubler and LO buffer amplifier
makes the provision of the LO easier than for
fundamental mixers at these frequencies. I and Q
mixer outputs are provided and an external 90
degree hybrid is required to select the desired
sideband.
The device comes in a 7x7mm SMT package that is
RoHS compliant. This device has been designed for
use in 38/42 GHz Point-to-Point Microwave Radio
applications.
Ordering Information
Part Number
XR1008-QB-0N00
XR1008-QB-0N0T
XR1008-QB-EV1
Package
bulk quantity
tape and reel
evaluation module
Functional Schematic
Rev. V1
Pin Configuration1
Pin No. Function Pin No. Function
3 Ground 17 Ground
4 RF Input 18 LO Input
5 Ground 19 Ground
8
VG1
24 Ground
9
VG2
25 IF1 Output
10 Ground 26 Ground
11 IF2 Output 27 Drain Bias
12
Ground
All others Not Connected
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1 page  
XR1008-QB
Receiver
35 - 45 GHz
Rev. V1
App Note [1] Biasing - Please refer to the functional block diagram and pin-out table for biasing
information. The device is operated by biasing VD=4.0 V with ID=180 mA by adjusting the applied voltage
on VG1. VG1 typically requires-0.5 V to result in the drain current being 180 mA. The nominal input
impedance of this gate is 180 Ω, so it should be noted that the nominal gate current will be 2.7 mA.
Additionally, a fixed bias of VG2=-0.5 V is required to bias the mixer and doubler. Adjusting VG2 above or
below this value can adversely affect conversion gain, image rejection and intercept point performance. It is
recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. The diagram “Active Bias Circuit” demonstrates a possible method
for active biasing. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in
series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain
correct drain current and thus drain voltage. Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available
before applying the positive drain supply.
Active Bias Circuit
5.0V
5k76
4.0V
1
3.3V
MMBT3904
1
12k1
12k1
( )I =
5-4
5.62
5R62 (sense)
4V, 180mA
4.0V
MMBT3906
100R
-5.0V
1k0
100n
BAV99
3
Vd
100n
10R
Vg1
3 BAV99
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet XR1008-QB.PDF ] | |
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