|
|
Número de pieza | BR806 | |
Descripción | SILICON BRIDGE RECTIFIERS | |
Fabricantes | MDD | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BR806 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BR-8
0.30(7.60)
0.25(6.35)
0.052(1.3) DIA.
0.048(1.2) TYP.
0.750 MIN.
(19.1)
BR8005 THRU BR810
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,at 5 lbs. (2.3kg) tension
0.770(19.6)
0.730(18.5)
0.52(13.2)
0.48(12.2)
HOLE FOR
NO.6 SCREW
AC 0.52(13.2) 0.770(19.6)
0.48(12.2) 0.730(18.5)
AC
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting:Thru hole for #6 serew,5in.-lbs. torque max.
Weight:0.20o unce, 5.62 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS BR8005 BR801 BR802 BR804 BR806
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600
Maximum RMS voltage
VRMS
35
70 140 280 420
Maximum DC blocking voltage
VDC 50 100 200 400 600
Maximum average
forward output
TC=50 C (Note 1)
TC=100 C (Note 1) I(AV)
8.0
6.0
rectified current at
TA=50 C (Note 2)
6.0
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
125.0
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
I2t
64
Maximum instantaneous forward voltage drop
per bridge element at 4.0A
VF
1.1
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
10
1.0
Isolation voltage from case to leads
VISO
2500
Typical Thermal Resistance (Note 1)
RθJA
6.0
Operating junction temperature range
TJ
-55 to +125
storage temperature range TSTG -55 to +150
NOTES:
1.Unit mounted on 8.7” x 8.7” x0.24” thick(22x22x0.6cm)Al.plate.
2.Unit mounted on P.C. board with 0.47” x 0.47”(12x12mm) copper pads,0.375”
BR808 BR810 UNITS
800 1000 VOLTS
560 700 VOLTS
800 1000 VOLTS
Amps
Amps
A2s
Volts
µA
mA
VAC
C/W
C
C
MDD ELECTRONIC
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BR806.PDF ] |
Número de pieza | Descripción | Fabricantes |
BR800 | SILICON BRIDGE RECTIFIERS | EIC discrete Semiconductors |
BR800 | Diode ( Rectifier ) | American Microsemiconductor |
BR8005 | SILICON BRIDGE RECTIFIERS | GOOD-ARK |
BR8005 | SILICON BRIDGE RECTIFIERS | MDD |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |