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Datasheet BZX55-C16 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BZX55-C16AXIAL LEAD ZENER DIODES

DATA SHEET BZX55-C SERIES AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 47 Volts POWER 500 mWatts DO-35 FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb
Pan Jit International
Pan Jit International		diode
2BZX55-C16500mW Zener Diode

Pb RoHS COMPLIANCE Features — Fast switching speed — General purpose rectification — Silicon epitaxial planar construction Mechanical Data — Case: DO-35 — Leads:Solderableper MIL-STD-202, Method 208 — Polarity: Cathode band — Marking: Type number — Weight: 0.13 grams (approx.) BZX55C SERIES
Taiwan Semiconductor
Taiwan Semiconductor		diode
3BZX55-C160.5W SILICON PLANAR ZENER DIODES

CE CHENYI ELECTRONICS FEATURES . The zener voltage are graded according to the international E24 standard .Other voltage tolerance and higher zener voltage on request. BZX55-C0V8 THRU BZX55-C200 0.5W SILICON PLANAR ZENER DIODES MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color band denote
CHENYI ELECTRONICS
CHENYI ELECTRONICS		diode
4BZX55-C16Zener Diode, Rectifier

BZX55-C0V8 THRU BZX55-C75 ZENER DIODES FEATURES DO-35 min. 1.083 (27.5) ♦ Silicon Planar Power Zener Diodes ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ±5%. Replace suffix “C” with “B” for ±2% tolerance. Other volta
General Semiconductor
General Semiconductor		diode
5BZX55-C16500 mWatt Zener Diode 2.42 to 47 Volts

MCC Features • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BZX55-C2V4 THRU BZX55-C47 500 mWatt Zener Diode 2.42 to 47 Volts Silicon Planar Power Zener Diodes Glass Package Maximum Ratings Symbol PD RJA TJ TSTG Rating Po
Micro Commercial Components
Micro Commercial Components		diode


BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
2BZX10Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
3BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
4BZX11Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
5BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
6BZX12Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
7BZX13Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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