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Número de pieza | MS10N65 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Bruckewell | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MS10N65 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MS10N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS10N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=700V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
IDM Pulsed Drain Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
• Drain current limited by maximum junction temperature
Value
650
±30
9.5
6.0
38
700
15.6
5.5
Unit
V
V
A
A
A
mJ
mJ
V/ns
Publication Order Number: [MS10N65]
© Bruckewell Technology Corporation Rev. A -2014
1 page MS10N65
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS10N65]
© Bruckewell Technology Corporation Rev. A -2014
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MS10N65.PDF ] |
Número de pieza | Descripción | Fabricantes |
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MS10N65 | N-Channel MOSFET | Bruckewell |
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