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부품번호 | PZU3.0B 기능 |
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기능 | Single Zener diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
PZUxB series
Single Zener diodes in a SOD323F package
Rev. 02 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface
Mounted Device (SMD) plastic package.
1.2 Features
Total power dissipation: ≤ 310 mW
Tolerance series: B: approximately ±5 %; B1, B2, B3: sequential, approximately ±2 %
Small plastic package suitable for surface mounted design
Wide working voltage range: nominal 2.4 V to 36 V
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
VF
Ptot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
IF = 100 mA
Tamb ≤ 25 °C
Min Typ Max Unit
[1] - - 1.1 V
[2] - - 310 mW
[3] - - 550 mW
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 8. Characteristics per type; PZU2.4B to PZU5.6B3
Tj = 25 °C unless otherwise specified
PZU
xxx
Sel Working
voltage
VZ (V);
IZ = 5 mA
Maximum differential
resistance
rdif (Ω)
Reverse
current
IR (μA)
Min Max IZ = 0.5 mA IZ = 5 mA Max VR (V)
2.4 B 2.3 2.6 1000
100
50 1
Temperature Diode
coefficient capacitance
SZ (mV/K);
IZ = 5 mA
Cd (pF)[1]
Typ Max
−1.6 450
Non-repetitive peak
reverse current
IZSM (A)[2]
Max
8
2.7 B 2.5 2.9 1000
100
20 1
−2.0
440
8
B1 2.5 2.75
B2 2.65 2.9
3.0 B 2.80 3.20 1000
95
10 1
−2.1
425
8
B1 2.80 3.05
B2 2.95 3.20
3.3 B 3.10 3.50 1000
95
5 1 −2.4
410
8
B1 3.10 3.35
B2 3.25 3.50
3.6 B 3.40 3.80 1000
90
5 1 −2.4
390
8
B1 3.40 3.65
B2 3.55 3.80
3.9 B 3.70 4.10 1000
90
3 1 −2.5
370
8
B1 3.70 3.97
B2 3.87 4.10
4.3 B 4.01 4.48 1000
90
3 1 −2.5
350
8
B1 4.01 4.21
B2 4.15 4.34
B3 4.28 4.48
4.7 B 4.42 4.90 800
80
2 1 −1.4
325
8
B1 4.42 4.61
B2 4.55 4.75
B3 4.69 4.90
5.1 B 4.84 5.37 250
60
2 1.5 0.3
300 5.5
B1 4.84 5.04
B2 4.98 5.20
B3 5.14 5.37
5.6 B 5.31 5.92 100
40
1 2.5 1.9
275 5.5
B1 5.31 5.55
B2 5.49 5.73
B3 5.67 5.92
[1] f = 1 MHz; VR = 0 V
[2] tp = 100 μs; square wave; Tj = 25 °C prior to surge
PZUXB_SER_2
Product data sheet
Rev. 02 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
300
IF
(mA)
200
mbg781
100
0
0.6
Tj = 25 °C
0.8
1
VF (V)
Fig 1. Forward current as a function of forward
voltage; typical values
10
SZ
(mV/K)
5
0
mgl274
12
11
10
9.1
8.2
7.5
6.8
6.2
5.6
5.1
4.7
−5
0
4
8
12 16
20
IZ (mA)
Fig 3.
PZU4.7B to PZU12B
Tj = 25 °C to 150 °C
Temperature coefficient as a function of
working current; typical values
0
SZ
(mV/K)
−1
mgl273
4.3
3.9
3.6
−2 3.3
3.0
−3
0
2.4
2.7
20 40 IZ (mA) 60
Fig 2.
PZU2.4B to PZU4.3B
Tj = 25 °C to 150 °C
Temperature coefficient as a function of
working current; typical values
400
Ptot
(mW)
300
006aaa687
200
100
0
0 50 100 150 200
Tamb (°C)
FR4 PCB, standard footprint
Fig 4. Power derating curve
PZUXB_SER_2
Product data sheet
Rev. 02 — 15 November 2009
© NXP B.V. 2009. All rights reserved.
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PZU3.0 | Single Zener diodes | NXP Semiconductors |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |