|
|
|
부품번호 | AON6558 기능 |
|
|
기능 | 30V N-Channel AlphaMOS | ||
제조업체 | Alpha & Omega Semiconductors | ||
로고 | |||
전체 6 페이지수
AON6558
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.01mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
30
24
120
25
20
40
8
36
24
9.5
5
3.2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
45
4.2
Max
25
55
5.2
30V
30A
< 5.1mΩ
< 8.2mΩ
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: August 2013
www.aosmd.com
Page 1 of 6
AON6558
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
ID=20A
8
6
4
2
0
0 5 10 15
Qg (nC)
Figure 7: Gate-Charge Characteristics
1600
1400
1200
Ciss
1000
800
600
Coss
400
200
0 Crss
20 0 5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
100.0
10.0
RDS(ON)
limited
1.0
10µs
10µs
100µs
DC 1ms
10ms
0.1 TJ(Max)=150°C
TC=25°C
0.0
0.01 0.1 1 10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5.2°C/W
1
200
TJ(Max)=150°C
TC=25°C
150
100
50
0
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
10
100
Rev.1.0: August 2013
www.aosmd.com
Page 4 of 6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ AON6558.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AON6552 | N-Channel MOSFET | Alpha & Omega Semiconductors |
AON6554 | 30V N-Channel AlphaMOS | Alpha & Omega Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |