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부품번호 | GB20B60PD1 기능 |
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기능 | IRGB20B60PD1 | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
PD - 94613A
SMPS IGBT IRGB20B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Equivalent MOSFET
Parameters
RCE(on) typ. = 158mΩ
ID (FET equivalent) = 20A
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
GCE
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
40
22
80
80
10
4
16
±20
215
86
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
0.58
5.0
–––
80
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1 www.irf.com
12/10/03
IRGB20B60PD1
450
400
350
300
TJ = 25°C
TJ = 125°C
250
200
150
100
50
0
0 5 10 15 20
VGE (V)
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
9
8 ICE = 20A
7 ICE = 13A
6 ICE = 8.0A
5
4
3
2
1
0
0
350
5 10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
20
300
EON
250
200
150 EOFF
100
50
0
0 5 10 15 20 25
IC (A)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 10Ω; VGE = 15V.
Diode clamp used: 8ETH06 (See C.T.3)
4
10
9
8
7
6
5
4
3
2
1
0
0
100
ICE = 20A
ICE = 13A
ICE = 8.0A
5 10 15
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
20
10 TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.0
1.0
2.0
3.0
4.0
Forward Voltage Drop - V
5.0
FM(V)
6.0
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1000
tdOFF
100
tdON
10 tF
tR
1
0 5 10 15 20 25
IC (A)
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 10Ω; VGE = 15V.
Diode clamp used: 8ETH06 (See C.T.3)
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4페이지 IRGB20B60PD1
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01 0.01
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τ4 τ4
Ri (°C/W)
τCτ
0.0076
0.2696
0.1568
τi (sec)
0.000001
0.000270
0.001386
CiC= iτi/Ri/iRi
0.1462 0.015586
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
10
D = 0.50
1 0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01 ( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
1.779 0.000226
3.223 0.001883
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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부품번호 | 상세설명 및 기능 | 제조사 |
GB20B60PD1 | IRGB20B60PD1 | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |