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PDF DSA120C150QB Data sheet ( Hoja de datos )

Número de pieza DSA120C150QB
Descripción Schottky Diode
Fabricantes IXYS 
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Schottky Diode Gen ²
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA120C150QB
1 23
DSA120C150QB
VRRM
I FAV
VF
= 150 V
= 2x 60 A
= 0.8 V
Backside: cathode
Features / Advantages:
Very low Vf
Extremely low switching losses
Low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Applications:
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Package: TO-3P
Industry standard outline
compatible with TO-247
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031b

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DSA120C150QB pdf
DSA120C150QB
Schottky
120
100
10000
100
80
IF
60
[A]
40
20
TVJ =
150°C
125°C
25°C
TVJ=175°C
10
150°C
IR 1
125°C
[mA]
0.1 100°C
75°C
0.01
50°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF [V]
Fig. 1 Max. forward voltage
drop characteristics
0.001 25°C
0 50
100 150
VR [V]
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
CT
1000
[pF]
TVJ = 25°C
100
0
50 100 150
VR [V]
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
80 60
60
IF(AV)
40
[A]
20
DC
d = 0.5
50
40
P(AV)
30
[W]
20
10
d=
DC
0.5
0.33
0.25
0.17
0.08
0
0 50 100 150 200
TC [°C]
Fig. 4 Average forward current
IF(AV) vs. case temp TC
0
0 10 20 30 40 50 60
IF(AV) [A]
Fig. 5 Forward power loss
characteristics
70
0.4
0.3
ZthJC
0.2
[K/W]
0.1
Rthi
ti
0.022 0.0002
0.082 0.0032
0.104 0.026
0.165 0.208
0.027 0.79
0.0
0.001
0.01
0.1
1
10
t [s]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031b

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