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부품번호 | SFH4550 기능 |
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기능 | High Power Infrared Emitter | ||
제조업체 | OSRAM | ||
로고 | |||
전체 12 페이지수
2014-02-05
High Power Infrared Emitter (850 nm)
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
Version 1.1
SFH 4550
Features:
• High Power Infrared LED
• Narrow emission angle ± 3°
• Very high radiant intensity
• Short switching times
• UL version available
Applications
• Infrared Illumination for cameras
• Data transmission
• Sensor technology
• Smoke detectors
Besondere Merkmale:
• Infrarot LED mit hoher Ausgangsleistung
• Enger Abstrahlwinkel ± 3°
• Sehr hohe Strahlstärke
• Kurze Schaltzeiten
• UL Version erhältlich
Anwendungen
• Infrarotbeleuchtung für Kameras
• Datenübertragung
• Sensorik
• Rauchmelder
Notes
Depending on the mode of operation, these devices
emit highly concentrated non visible infrared light
which can be hazardous to the human eye. Products
which incorporate these devices have to follow the
safety precautions given in IEC 60825-1 and IEC
62471.
Hinweise
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare
Infrarot-Strahlung, die gefährlich für das
menschliche Auge sein kann. Produkte, die diese
Bauteile enthalten, müssen gemäß den
Sicherheitsrichtlinien der IEC-Normen 60825-1 und
62471 behandelt werden.
2014-02-05
1
Version 1.1
SFH 4550
Parameter
Bezeichnung
Temperature coefficient of Ie or Φe
Temperaturkoeffizient von Ie bzw. Φe
(IF = 100 mA, tp = 20 ms)
Temperature coefficient of VF
Temperaturkoeffizient von VF
(IF = 100 mA, tp = 20 ms)
Temperature coefficient of wavelength
Temperaturkoeffizient der Wellenlänge
(IF = 100 mA, tp = 20 ms)
(typ)
(typ)
(typ)
Symbol
Symbol
TCI
TCV
TCλ
Values
Werte
-0.5
Unit
Einheit
%/K
-0.7 mV / K
0.3 nm / K
Grouping (TA = 25 °C)
Gruppierung
Group
Gruppe
SFH 4550-EW
SFH 4550-FW
SFH 4550-GW
Min Radiant Intensity
Min Strahlstärke
IF= 100 mA, tp= 20 ms
Ie, min [mW / sr]
630
1000
1600
Max Radiant Intensity
Max Strahlstärke
IF= 100 mA, tp= 20 ms
Ie, max [mW / sr]
1250
2000
3200
Typ Radiant Intensity
Typ Strahlstärke
IF = 1 A, tp = 25 µs
Ie, typ [mW / sr]
7500
12000
19000
Note: Measured at a solid angle of Ω = 0.001 sr
Only one group in one packing unit (variation lower 2:1).
Anm.: gemessen bei einem Raumwinkel Ω = 0.001 sr
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1).
2014-02-05
4
4페이지 Version 1.1
SFH 4550
Radiation Characteristics 2) page 11
Abstrahlcharakteristik 2) Seite 11
Irel = f(ϕ)
40˚ 30˚ 20˚
10˚ 0˚
ϕ 1.0
OHL01718
50˚ 0.8
60˚
70˚
80˚
90˚
100˚
1.0
0.8
Package Outline
Maßzeichnung
0.6
0.4
0.6
0.4
0.2
0
0˚ 20˚ 40˚ 60˚
80˚ 100˚ 120˚
9.0 (0.354)
8.2 (0.323)
Area not flat
0.6 (0.024)
0.4 (0.016)
7.8 (0.307)
7.5 (0.295)
Cathode
5.9 (0.232)
5.5 (0.217)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
5.7 (0.224)
5.1 (0.201)
Chip position
Dimensions in mm (inch). / Maße in mm (inch).
2014-02-05
7
0.6 (0.024)
0.4 (0.016)
GEXY6271
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ SFH4550.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SFH4550 | High Power Infrared Emitter | OSRAM |
SFH4552 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |