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부품번호 | DHG20I600HA 기능 |
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기능 | High Performance Fast Recovery Diode | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DHG 20 I 600 HA
3
1
DHG 20 I 600 HA
preliminary
VRRM =
IFAV =
t rr =
600 V
20 A
40 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package:
● Housing: TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 600 V
VR = 600 V
IF = 20 A
IF = 40 A
IF = 20 A
IF = 40 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 20 A; VR = 300 V
-diF/dt = 450 A/µs
CJ junction capacitance
VR = 400 V; f = 1 MHz
TVJ = 25 °C
TVJ = 25°C
TVJ = 125 °C
TVJ = 25°C
TVJ = 125°C
TC = 95°C
TVJ = 150 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25°C
min. typ. max.
600
25
1.5
2.24
3.15
2.20
3.23
20
1.12
49
0.90
-55 150
140
150
8
12
40
60
12
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110526a
40
30
IF
20
[A]
10
TVJ = 125°C
TVJ = 25°C
0
0.0 0.5 1.0 1.5 2.0 2.5
VF [V]
Fig. 1 Typ. Forward current versus VF
3.0
20
TVJ = 125°C
VR = 300 V
16
40 A
20 A
10 A
IRR
12
[A]
8
4
200 300 400 500 600 700 800 900
diF /dt [A/µs]
Fig. 3 Typ. peak reverse current IRM vs. di/dt
1
DHG 20 I 600 HA
preliminary
0.8
0.7
0.6
Qrr
0.5
[µC]
0.4
T = 125°C
VJ
VR = 300 V
40 A
20 A
10 A
0.3
0.2
200 400 600 800
diF /dt [A/µs]
Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt
160
T = 125°C
140
VJ
VR = 300 V
120
100
trr
80
[ns]
60
40
20
40 A
20 A
10 A
0
200 300 400 500 600 700 800 900
diF /dt [A/µs]
Fig. 4 Typ. recovery time trr versus di/dt
ZthJC
[K/W]
0.1
0.001
0.01
Ri ti
1 0.231 0.0005
2 0.212 0.004
3 0.19 0.02
4 0.267 0.15
0.1 1 10
tP [s]
Fig. 5 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110526a
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부품번호 | 상세설명 및 기능 | 제조사 |
DHG20I600HA | High Performance Fast Recovery Diode | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |