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부품번호 | MEO450-12DA 기능 |
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기능 | Fast Recovery Epitaxial Diode | ||
제조업체 | IXYS | ||
로고 | |||
전체 2 페이지수
Fast Recovery
Epitaxial Diode
(FRED) Module
Preliminary data
VRSM
V
1200
VRRM
V
1200
Type
MEO 450-12DA
MEO 450-12 DA
VRRM = 1200 V
IFAVM = 453 A
trr = 450 ns
31
3
1
Symbol
IFRMS
IFAVM ÿÿx
IFRM
IFSM
I2t
TVJ
Tstg
TSmax
Ptot
VISOL
Md
dS
dA
a
Weight
Test Conditions
TC = 75°C
TC = 75°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
Maximum Ratings
640
453
2460
A
A
A
4800
5280
A
A
4320
4750
A
A
115200
117100
A2s
A2s
93300
94800
A2s
A2s
-40...+150
-40...+125
110
°C
°C
°C
1750 W
3000
3600
V~
V~
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
12.7
9.6
50
mm
mm
m/s2
150 g
Symbol
IR
VF
VT0
rT
RthJH
RthJC
trr
IRM
Test Conditions
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 300 A;
IF = 520 A;
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
For power-loss calculations only
DC current
DC current
IF = 600 A
VR= 600 V
-di/dt = 800 A/ms
TVJ = 100°C
TVJ = 25°C
TVJ = 100°C
Characteristic Values (per diode)
typ. max.
24 mA
6 mA
120 mA
1.51 V
1.78 V
1.76 V
1.96 V
1.16 V
1.15 mW
0.114 K/W
0.071 K/W
450 500 ns
110 A
165 A
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Features
q International standard package
with DCB ceramic base plate
q Planar passivated chips
q Short recovery time
q Low switching losses
q Soft recovery behaviour
q Isolation voltage 3600 V~
q UL registered E 72873
Applications
q Antiparallel diode for high frequency
switching devices
q Free wheeling diode in converters
and motor control circuits
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
Dimensions in mm (1 mm = 0.0394")
1-2
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구 성 | 총 2 페이지수 | ||
다운로드 | [ MEO450-12DA.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MEO450-12DA | Fast Recovery Epitaxial Diode | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |