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Número de pieza | DPG80C300HB | |
Descripción | High Performance Fast Recovery Diode | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG80C300HB
1 23
DPG80C300HB
VRRM
I FAV
t rr
= 300 V
= 2x 40 A
= 35 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
1 page DPG80C300HB
Fast Diode
80
0.6
18
60
IF
40
[A]
TVJ = 150°C
20
25°C
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
0.5
Qrr 0.4
IF = 60 A
30 A
15 A
[μC] 0.3
0.2
TVJ = 125°C
VR = 200 V
0.1
2.0 0 200 400 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
16
14
IRM 12
IF = 60 A
30 A
15 A
[A] 10
8
6
TVJ = 125°C
VR = 200 V
4
0
Fig. 3
200 400 600
-diF /dt [A/μs]
Typ. reverse recov. current
IRM versus -diF /dt
1.4
1.2
1.0
Kf 0.8
0.6
IRM
0.4
Qrr
0.2
0
40
80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
80
70
trr 60
[ns]
50
IF = 60 A
30 A
15 A
TVJ = 125°C
VR = 200 V
700
tfr
600
500
tfr
400
[ns]
300
200
7
VFR
6
TVJ = 125°C
VR = 200 V
IF = 30 A
5
VFR
4
[V]
3
2
40
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
100
0
1
200 400 600
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR & time tfr versus diF /dt
12
TVJ = 125°C
10 VR = 200 V
8
Erec
6
[μJ]
4
IF = 60 A
30 A
15 A
2
0.8
0.6
ZthJC
0.4
[K/W]
0.2
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet DPG80C300HB.PDF ] |
Número de pieza | Descripción | Fabricantes |
DPG80C300HB | High Performance Fast Recovery Diode | IXYS |
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