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부품번호 | DPH30IS600HI 기능 |
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기능 | High Performance Fast Recovery Diode | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
DPH 30 IS 600 HI
HiPerDynFRED²
High Performance Dynamic Fast Recovery Diode
Extreme Low Loss and Soft Recovery
Single Diode
Part number
1
DPH 30 IS 600 HI
3
VRRM =
IFAV =
t rr =
600 V
30 A
35 ns
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: isolated
Package:
● Housing: ISOPLUS247
●rIndustry standard outline
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 600 V
VR = 600 V
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 30 A; VR = 400 V
-diF/dt = 200 A/µs
CJ junction capacitance
VR = 400 V; f = 1 MHz
TVJ = 25 °C
TVJ = 25°C
TVJ = 150 °C
TVJ = 25°C
TVJ = 150°C
TC = 140°C
TVJ = 175 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
Ratings
min. typ. max.
600
1
0.2
2.48
3.02
1.89
2.45
30
1.10
12.6
0.55
-55 175
285
450
3
8
35
65
30
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100126a
DPH 30 IS 600 HI
80 0.8
20
70
60
50
IF
40
[A]
30
TVJ = 150°C
0.6
Qrr 0.4
[µC]
IF = 60 A
30 A
15 A
20
25°C
10
0.0 0.8 1.6 2.4 3.2 4.0
VF [V]
Fig. 1 Forward current IF versus
forward voltage VF
0.2
TVJ = 125°C
VR = 400 V
0.0
0
200 400 600
-diF /dt [A/µs]
Fig. 2 Typ. reverse recovery charge
Qrr versus -diF /dt
1.6 100
1.4
TVJ = 125°C
VR = 400 V
1.2 80
16
12
IRM
[A] 8
IF = 60 A
30 A
15 A
4
TVJ = 125°C
VR = 400 V
0
0 200 400 600
-diF /dt [A/µs]
Fig. 3 Typ. reverse recovery current
IRM versus -diF /dt
1000
800
TVJ = 125°C
tfr VR = 400 V
IF = 30 A
14
VFR
12
1.0
Kf 0.8
0.6 IRM
0.4
0.2 Qrr
trr 60
[ns]
IF = 60 A
40
30 A
15 A
600
tfr
[ns]
400
200
10
VFR
8
[V]
6
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qrr, IRM versus TVJ
20
0 200 400 600
-diF /dt [A/µs]
Fig. 5 Typ. reverse recovery time
trr versus -diF /dt
25
20
15
Erec
[µJ]
10
TVJ = 125°C
VR = 400 V
I = 15 A
F
30 A
60 A
0.6
0.5
0.4
ZthJC
0.3
[K/W]
0.2
04
0 200 400 600
-diF /dt [A/µs]
Fig. 6 Typ. forward recovery voltage VFR
& forward recovery time tfr vs. diF /dt
5 0.1
0
0 200 400 600
-diF /dt [A/µs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100126a
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부품번호 | 상세설명 및 기능 | 제조사 |
DPH30IS600HI | High Performance Fast Recovery Diode | IXYS |
DPH30IS600HI | High Performance Fast Recovery Diode | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |