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PDF DSEP15-06AS Data sheet ( Hoja de datos )
| Número de pieza | DSEP15-06AS | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP15-06AS
1
3
2/4
DSEP15-06AS
VRRM
I FAV
t rr
=
=
=
600 V
15 A
35 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120318a
1 page  
DSEP15-06AS
Fast Diode
40
30
IF
20
[A]
10
TVJ = 150°C
100°C
25°C
2000
TVJ = 100°C
VR = 300 V
1500
Qr
1000
[μC]
500
IF = 30A
15 A
7.5 A
40
TVJ = 100°C
VR = 300 V
30
IRM
20
[A]
IF = 30A
15 A
7.5 A
10
0
012
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
1.5
Kf 1.0
0.5
IRM
Qr
0
100 1000
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF/dt
120 20 1.6
TVJ = 100°C
VR = 300 V
TVJ = 100°C
V IF = 15 A
110
15 1.2
trr 100
[ns] 90
80
IF = 30A
15 A
7.5 A
VFR
10
[V]
5
VFR
trr
0.8
[μs]
0.4
trr
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
70
0 200 400 600 800
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
1000
0 0.0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
10
1
ZthJC
0.1
[K/W]
0.01
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.908 0.0052
2 0.350 0.0003
3 0.342 0.017
0.001
0.00001
0.0001
0.001
0.01
t [s]
Fig. 7 Transient thermal impedance junction to case
0.1
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120318a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DSEP15-06AS.PDF ] | |
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