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PDF DSEP15-06BS Data sheet ( Hoja de datos )
| Número de pieza | DSEP15-06BS | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP15-06BS
1
3
2/4
DSEP15-06BS
VRRM
I FAV
t rr
=
=
=
600 V
15 A
25 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130318a
1 page  
DSEP15-06BS
Fast Diode
50
40
TVJ = 150°C
IF 30
[A] 20
TVJ = 100°C
10
TVJ = 25°C
0
0123
VF [V]
Fig. 1 Forward current
IF versus VF
4
600
TVJ = 100°C
500 VR = 300 V
400
Qr
300
[μC]
200
IF = 30 A
IF = 15 A
IF = 7.5 A
100
20
16
12
IRM
8
[A]
4
IF = 30 A
IF = 15 A
IF = 7.5 A
TVJ = 100°C
VR = 300 V
0
100 1000
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
2.0
1.5
Kf 1.0
IRM
0.5
0.0
0
Qr
40
80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
120
100
trr
80
[ns]
60
TVJ = 100°C
VR = 300 V
IF = 30 A
IF = 15 A
IF = 7.5 A
40
0 200 400 600 800
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
1000
60
TVJ = 100°C
50 IF = 15 A
40
VFR
30
[V]
20
VFR
10
0.30
0.25
0.20
0.1tf5r
[μs]
tfr 0.10
0.05
0 0.00
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
10
1
ZthJC
0.1
[K/W]
0.01
0.001
0.00001
0.0001
0.001
0.01
t [s]
Fig. 7 Transient thermal impedance junction to case
0.1
DSEP 15-06B
1
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.908
0.0052
2 0.350
0.0003
3 0.342
0.017
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130318a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DSEP15-06BS.PDF ] | |
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