|
|
|
부품번호 | 2N4339 기능 |
|
|
기능 | N-Channel JFETs | ||
제조업체 | Vishay | ||
로고 | |||
전체 6 페이지수
2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338
2N4339
2N4340
2N4341
VGS(off) (V)
–0.3 to –1
–0.6 to –1.8
–1 to –3
–2 to –6
V(BR)GSS Min (V) gfs Min (mS)
–50 0.6
–50 0.8
–50 1.3
–50 2
IDSS Max (mA)
0.6
1.5
3.6
9
FEATURES
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
TO-206AA
(TO-18)
S
1
2
D
3
Top View
G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C
For applications information see AN102 and AN106.
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes
a. Derate 2 mW/_C above 25_C
www.vishay.com
7-1
2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1500
10
1200
gos 8
Common-Source Forward Transconductance
vs. Drain Current
2
VGS(off) = –1.5 V
VDS = 10 V
f = 1 kHz
1.6
900
rDS
6 1.2
TA = –55_C
600
4 0.8
25_C
300
0
0
400
320
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz
–1 –2 –3 –4
VGS(off) – Gate-Source Cutoff Voltage (V)
2
0
–5
Output Characteristics
VGS(off) = –0.7 V
VGS = 0 V
240 –0.1 V
160 –0.2 V
–0.3 V
80
–0.5 V
–0.4 V
0
0
4 8 12 16
VDS – Drain-Source Voltage (V)
20
Output Characteristics
300
VGS(off) = –0.7 V
240
VGS = 0 V
–0.1 V
180
120
60
0
0
–0.2 V
–0.3 V
–0.4 V
–0.5 V
0.1 0.2 0.3 0.4
VDS – Drain-Source Voltage (V)
0.5
www.vishay.com
7-4
0.4 125_C
0
0.01
0.1
ID – Drain Current (mA)
1
Output Characteristics
2
VGS(off) = –1.5 V
1.6
VGS = 0 V
1.2
–0.3 V
0.8
–0.6 V
0.4
–1.2 V
–0.9 V
0
0
4 8 12 16
VDS – Drain-Source Voltage (V)
20
Output Characteristics
1
VGS(off) = –1.5 V
0.8
VGS = 0 V
0.6
–0.3 V
–0.6 V
0.4
0.2
0
0
–0.9 V
–1.2 V
0.2 0.4 0.6 0.8
VDS – Drain-Source Voltage (V)
1.0
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 2N4339.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
2N4338 | N-Channel JFET Low Noise Amplifier | Calogic LLC |
2N4338 | Diode ( Rectifier ) | American Microsemiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |