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PDF TMP3N80G Data sheet ( Hoja de datos )
| Número de pieza | TMP3N80G | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP3N80/TMPF3N80
TMP3N80G/TMPF3N80G
VDSS = 880 V @Tjmax
ID = 3A
RDS(ON) = 4.2 W(max) @ VGS= 10 V
D
G
Device
TMP3N80 / TMPF3N80
TMP3N80G / TMPF3N80G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP3N80 / TMPF3N80
TMP3N80G / TMPF3N80G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
January 2013 : Rev. 1.0
Symbol
RqJC
RqJA
www.trinnotech.com
TMP3N80(G)
TMPF3N80(G)
800
±30
3 3*
1.83 1.83 *
12 12*
283
3
9.4
94 32
0.75 0.25
4.5
-55~150
300
TMP3N80(G)
1.33
62.5
TMPF3N80(G)
3.9
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Unit
℃/W
℃/W
1/7
1 page  
TMP3N80/TMPF3N80
TMP3N80G/TMPF3N80G
TMP3N80(G)
100 Duty=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2 single pulse
PDM
t
T
Duty = t/T
Z (t) = 1.33 ℃/W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF3N80(G)
Duty=0.5
100 0.2
0.1
0.05
0.02
10-1 0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 3.9 ℃/W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
January 2013 : Rev. 1.0
www.trinnotech.com
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TMP3N80G.PDF ] | |
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