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부품번호 | TMP16N60AG 기능 |
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기능 | N-channel MOSFET | ||
제조업체 | TRinno | ||
로고 | |||
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP16N60A(G)/TMPF16N60A(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
16A < 0.47W
Device
TMP16N60A / TMPF16N60A
TMP16N60AG / TMPF16N60AG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP16N60A / TMPF16N60A
TMP16N60AG / TMPF16N60AG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP16N60A(G) TMPF16N60A(G)
600
±30
16 16 *
9.97 9.97 *
64 64 *
194
16
29
290 48
2.32 0.38
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP16N60A(G)
0.43
62.5
December 2014 : Rev0.1
www.trinnotech.com
TMPF16N60A(G)
2.6
62.5
Unit
℃/W
℃/W
1/7
TMP16N60A(G)/TMPF16N60A(G)
1.20
1.15
1.10
V =0V
GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80
-80
-40
0 40 80
Junction Temperature,T [oC]
J
120
3.0
V = 10 V
GS
I =8A
D
2.5
2.0
1.5
1.0
0.5
0.0
160 -80
-40 0 40 80 120
Junction Temperature, T [oC]
J
160
16 1.5
12
1.0
8
0.5
4
V =V
DS GS
I = 250 A
D
0 0.0
25 50 75 100 125 150 -80 -40 0 40 80 120 160
Case Temperature, T [℃]
C
Junction Temperature, T [oC]
J
TMP16N60A(G)
TMPF16N60A(G)
Operation in This Area
102
is Limited by R
DS(on)
101
100
10 us
100 us
1 ms
10 ms
100 ms
DC
102
101
100
Operation in This Area
is Limited by R
DS(on)
10 us
100 us
1 ms
10 ms
100 ms
DC
10-1
10-2
100
T = 25 oC
C
T = 150 oC
J
Single Pulse
101 102
Drain-Source Voltage, V [V]
DS
December 2014 : Rev0.1
10-1
T = 25 oC
C
T = 150 oC
J
Single Pulse
10-2
103 100
www.trinnotech.com
101 102
Drain-Source Voltage, V [V]
DS
103
4/7
4페이지 TMP16N60A(G)/TMPF16N60A(G)
TO-220F-3L MECHANICAL DATA
SYMBOL
A
b
b1
c
D
E
e
F
G
L
L1
Q
Q1
ØP
MIN MAX
4.50 4.93
0.70 0.91
1.15 1.47
0.36 0.60
15.67
16.07
6.96 10.36
2.54 BSC
2.34 2.74
6.48 6.90
12.37
13.18
2.23 3.43
2.56 2.96
3.10 3.50
2.98 3.38
Disclaimer :
TRinno technology reserves the right to make changes without notice to products herein to improve reliability, performance, or design.
The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a
guarantee of conditions and characteristics. With respect to any information regarding the application of the device, TRinno
technology hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-
infringement of patent rights of any third party.
December 2014 : Rev0.1
www.trinnotech.com
7/7
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부품번호 | 상세설명 및 기능 | 제조사 |
TMP16N60A | N-channel MOSFET | TRinno |
TMP16N60AG | N-channel MOSFET | TRinno |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |