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PDF MRF6522-10R1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6522-10R1 | |
| Descripción | RF Power FET | |
| Fabricantes | Motorola Semiconductors | |
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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF6522–10/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for Class A–AB common source, linear power amplifiers in the
960 MHz range. The MRF6522–10R1 has been specifically designed for use
in Communications Network (GSM) base stations. The package offers the
advantage of SMD.
• Specified 26 Volts, 960 MHz, Class AB Characteristics
Output Power = 10 Watts CW
Power Gain = 15 dB Min @ 960 MHz, 10 Watts CW
Drain Efficiency = 48% Min @ 960 MHz, 10 Watts CW
D
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
• In Tape and Reel. R1 Suffix = 500 Units per
12 mm, 7 inch Reel.
G
S
MRF6522-10R1
960 MHz, 10 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 458C–03, STYLE 1
NI–200Z
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.2 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
(1) Thermal resistance is determined under specified RF operating condition.
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Min
65
—
—
Value
65
±20
29
0.17
–65 to +150
200
Max
4.0
Typ Max
——
— 1.0
— 1.0
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF6522–10R1
1
Archived 2005
1 page  
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
f
GHz
0.500
0.525
0.550
0.575
0.600
0.625
0.650
0.675
0.700
0.725
0.750
0.775
0.800
0.825
0.850
0.875
0.900
0.925
0.950
0.975
1.000
f
GHz
0.500
0.525
0.550
0.575
0.600
0.625
0.650
0.675
0.700
0.725
0.750
0.775
0.800
0.825
0.850
0.875
0.900
0.925
0.950
0.975
1.000
Table 1. Common Source S–Parameters at VDS = 12 Vdc, ID = 100 mAdc
S11
|S11|
∠φ
0.794
–158
0.800
–159
0.807
–160
0.811
–161
0.816
–162
0.822
–163
0.826
–164
0.832
–165
0.836
–166
0.841
–166
0.846
–167
0.851
–168
0.855
–168
0.858
–169
0.863
–170
0.866
–171
0.869
–172
0.872
–172
0.876
–173
0.879
–174
0.882
–174
|S21|
2.77
2.61
2.45
2.31
2.18
2.06
1.95
1.85
1.75
1.66
1.58
1.51
1.44
1.37
1.31
1.25
1.20
1.15
1.10
1.06
1.02
S21
∠φ
54
52
49
48
46
44
42
40
39
37
35
34
32
31
29
28
27
25
24
23
22
|S12|
0.050
0.049
0.048
0.047
0.046
0.045
0.043
0.042
0.041
0.040
0.039
0.038
0.037
0.036
0.035
0.034
0.033
0.031
0.030
0.029
0.028
S12
∠φ
–29
–32
–33
–35
–37
–38
–40
–41
–41
–42
–44
–45
–46
–47
–48
–49
–50
–51
–52
–52
–53
S22
|S22|
∠φ
0.720
–150
0.730
–151
0.738
–152
0.746
–153
0.755
–154
0.763
–155
0.770
–156
0.779
–157
0.785
–158
0.793
–159
0.800
–160
0.805
–161
0.812
–162
0.818
–163
0.824
–164
0.830
–165
0.835
–166
0.840
–166
0.846
–167
0.850
–168
0.853
–169
Table 2. Common Source S–Parameters at VDS = 12 Vdc, ID = 250 mAdc
S11
|S11|
∠φ
0.784
–164
0.789
–165
0.794
–166
0.798
–167
0.802
–167
0.806
–168
0.811
–169
0.814
–169
0.819
–170
0.823
–171
0.827
–171
0.831
–172
0.834
–172
0.838
–173
0.842
–174
0.845
–174
0.850
–175
0.852
–175
0.854
–176
0.859
–176
0.861
–177
|S21|
3.49
3.29
3.11
2.94
2.79
2.65
2.52
2.40
2.28
2.18
2.08
1.99
1.90
1.82
1.74
1.67
1.61
1.54
1.48
1.43
1.38
S21
∠φ
59
57
55
53
51
50
48
46
45
43
42
40
39
37
36
35
33
32
31
30
28
|S12|
0.041
0.040
0.040
0.038
0.037
0.037
0.036
0.035
0.034
0.034
0.032
0.032
0.031
0.031
0.029
0.028
0.028
0.027
0.027
0.025
0.025
S12
∠φ
–22
–25
–26
–26
–28
–30
–31
–32
–32
–34
–36
–36
–36
–38
–38
–39
–39
–41
–42
–41
–42
S22
|S22|
∠φ
0.690
–158
0.697
–159
0.705
–160
0.711
–160
0.719
–161
0.726
–162
0.732
–162
0.740
–163
0.747
–164
0.753
–164
0.760
–165
0.765
–166
0.772
–166
0.778
–167
0.783
–168
0.790
–169
0.797
–169
0.801
–170
0.807
–170
0.810
–171
0.815
–171
MOTOROLA RF DEVICE DATA
MRF6522–10R1
5
Archived 2005
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF6522-10R1.PDF ] | |
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