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부품번호 | K2371 기능 |
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기능 | MOSFET ( Transistor ) - 2SK2371 | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
www.DataSheet4U.com designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)
• Low Ciss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
15.7 MAX. 3.2 ± 0.2
4
1 23
4.7 MAX.
1.5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±25
A
Drain Current (pulse)*
ID(pulse)
±100
A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (Ta = 25 °C) PT2 3.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 ~ +150 °C
Single Avalanche Current**
IAS 25 A
Single Avalanche Energy**
EAS 446 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2.2 ± 0.2
5.45
1.0 ± 0.2
5.45
MP-88
0.6 ± 0.1 2.8 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Gate
Body
Diode
Source
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
© 1995
2SK2371/2SK2372
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth (ch-a) = 41.7 °C/W
10
Rth (ch-c) = 0.78 C/W
1.0
0.1
0.01
w
w
w
.
D
a
t
a
S
h
e
e
t
4
U
.
c
o
m
0.001
10
µ
100 µ
1m
10 m 100 m
1
PW - Pulse Width - (s)
Tc = 25 °C
Single Pulse
10 100 1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = –25 °C
25 °C
75 °C
125°C
10
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5 Pulsed
1.0
ID = 25 A
13 A
6A
0.5
VDS = 10 V
Pulsed
0.1
1.0 10 100 1000
ID - Drain Current - (A)
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1.5
1.0
0.5
VGS = 10 V
0 Pulsed
1.0 10 100 1000
ID - Drain Current - (A)
0 5 10 15 20
VGS - Gate to Source Voltage - (V)
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
–50
0
50 100 150
Tch - Channel Temperature - (°C)
4
4페이지 REFERENCE
www.DataSheet4U.com
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Power MOS FET features and application switching power supply.
Application circuits using Power MOS FET.
Safe operating area of Power MOS FET.
2SK2371/2SK2372
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
TEA-1034
TEA-1035
TEA-1037
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K2370 | MOSFET ( Transistor ) - 2SK2370 | NEC |
K2371 | MOSFET ( Transistor ) - 2SK2371 | NEC |
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