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PDF MTN13N50CFP Data sheet ( Hoja de datos )
| Número de pieza | MTN13N50CFP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C117FP
Issued Date : 2015.12.27
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN13N50CFP BVDSS
500V
ID @VGS=10V, TC=25°C
13A
ID @VGS=10V, TC=100°C 8.2A
RDS(ON)@VGS=10V, ID=6.5A 0.42Ω(typ)
Description
The MTN13N50CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Ordering Information
Device
MTN13N50CFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN13N50CFP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C117FP
Issued Date : 2015.12.27
Revised Date :
Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Static Drain-Source On-resistance vs Ambient Temperature
3.0
Ciss 2.5
1000 2.0
Coss
100
f=1MHz
Crss
10
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
1.5
1.0
0.5
ID=6.5A,
VGS=10V
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Maximum Safe Operating Area
100
10μs
100μs
10
1ms
1 Operation in this
area is limited by
RDS(ON)
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=2.58°C/W
Single pulse
10ms
100ms
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
15
Gate Charge Characteristics
10
VDS=90V
8
VDS=250V
6
4 VDS=380V
2
0
0
1.4
ID=13A
5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
12
9
6
3
VGS=10V, RθJC=2.58°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN13N50CFP
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN13N50CFP.PDF ] | |
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