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PDF MTN6N65BFP Data sheet ( Hoja de datos )
| Número de pieza | MTN6N65BFP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN6N65BFP BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=3A
650V
6A
1.02Ω
Description
The MTN6N65BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Switching Mode Power Supply
• LCD Panel Power
• Adapter
• E-bike Charger
Ordering Information
Device
MTN6N65BFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN6N65BFP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C099FP
Issued Date : 2016.01.20
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Ciss
1000
Static Drain-Source On-resistance vs Ambient Temperature
3.0
2.5 ID=3A,
VGS=10V
2.0
1.5
Coss
100 1.0
f=1MHz
Crss
10
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
10μs
100μs
1ms
10ms
1
100ms
0.1 TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=2.4°C/W
Single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
8
0.5 RDS(ON)@Tj=25°C:1.02Ω typ.
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=130V
8 VDS=325V
6
4 VDS=520V
2
0
0
1.4
ID=6A
5 10 15 20 25
Qg, Total Gate Charge(nC)
30
Threshold Voltage vs Junction Tempearture
1.2
6 ID=1mA
1
4
2
VGS=10V, RθJC=2.4°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN6N65BFP
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN6N65BFP.PDF ] | |
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