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6MBP75RTB060 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 6MBP75RTB060은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 6MBP75RTB060 기능
기능 IPM-R3 series IGBT
제조업체 Fuji Electric
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6MBP75RTB060 데이터시트, 핀배열, 회로
6MBP75RTB060
IPM-R3 series
600V / 75A 6 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
DC
1ms
Duty=74.9%
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES *1
IC
ICP
-IC *2
PC *3
Tj
VCC *4
Vin *5
Iin
VALM *6
IALM *7
Tstg
Topr
Viso *8
Rating
Unit
Min.
Max.
0
0
200
0
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-40
-20
-
-
-
450
500
400
600
75
150
75
198
150
20
Vcc+0.5
3
Vcc
20
125
100
AC2.5
3.5 *9
3.5 *9
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W.
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=74.9%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.
*7 : IALM shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N·m
Free Datasheet http://www.datasheet4u.com/




6MBP75RTB060 pdf, 반도체, 판매, 대치품
6MBP75RTB060
Block diagram
VccU 3
VinU 2
GNDU 1
VccV 6
VinV 5
GNDV 4
VccW 9
VinW 8
GNDW 7
Vcc 11
VinX 13
GND 10
VinY 14
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
VinZ 15
Pre-Driver
12 NC
ALM 16
RA LM
1.5k
Over heating protection
circuit
Outline drawings, mm
IGBT-IPM
P
U
V
W
B
NC
N
Pre-driver include following functions
1 Amplifier for drive
2 Short circuit protection
3 Under voltage lockout circuit
4 Over current protection
5 IGBT chip over heating protection
Mass : 450g

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6MBP75RTB060 전자부품, 판매, 대치품
6MBP75RTB060
IGBT-IPM
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
6
5
4
3
2
1
0
0 20 40 60 80
Collector current IC (A)
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
6
5
4
3
2
1
0
0
20 40 60 80
Collector current IC (A)
Reverse biased safe operating area
Vcc=15V, Tj <=125°C
300
250
200
150
100
50
0
0 100 200 300 400 500 600 700
Collector-Emitter voltage VCE (V)
Power derating for IGBT (per device)
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case temperature Tc (°C)
Transient thermal resistance
1
0.1
0.01
0.001
0.01 0.1
Pulse width Pw (sec.)
1
Power derating for FWD (per device)
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case temperature Tc (°C)

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관련 데이터시트

부품번호상세설명 및 기능제조사
6MBP75RTB060

IPM-R3 series IGBT

Fuji Electric
Fuji Electric
6MBP75RTB060

IPM-R3 series

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