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6MBP50TEA120 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 6MBP50TEA120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 6MBP50TEA120 자료 제공

부품번호 6MBP50TEA120 기능
기능 Econo IPM series IGBT
제조업체 Fuji Electric
로고 Fuji Electric 로고


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6MBP50TEA120 데이터시트, 핀배열, 회로
6MBP50TEA120
Econo IPM series
1200V / 50A 6 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
DC
1ms
DC
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Mounting (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
Rating
Min.
Max.
Unit
0
0
400
0
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
900
1000
800
1200
50
100
50
287
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
V
V
V
V
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W, N and U or V or W
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.44=287W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.




6MBP50TEA120 pdf, 반도체, 판매, 대치품
6MBP50TEA120
Block diagram
VccU 4
VinU 3
AL MU 2
GNDU 1
R ALM 1.5k
Vcc V 8
VinV 7
AL MV 6
GNDV 5
R ALM 1.5k
VccW 12
VinW 11
AL MW 10
GNDW 9
R ALM 1.5k
Vcc 14
VinX 16
GND 13
VinY 17
Pre- Driver
Vz
Pre- Driver
Vz
Pre- Driver
Vz
Pre- Driver
Vz
Pre- Driver
Vz
VinZ 18
Pre- Driver
Vz
VinDB 15
AL M 19
NC
R ALM 1.5k
Outline drawings, mm
Package type : P622
Dimensions in mm
IGBT-IPM
P
U
V
W
Pre-drivers include following functions
1.Amplifier for driver
2.Short circuit protection
3.Under voltage lockout circuit
NC B
4.Over current protection
5.IGBT chip over heating protection
N
Mass : 270g

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6MBP50TEA120 전자부품, 판매, 대치품
6MBP50TEA120
IGBT-IPM
Switching Loss vs. Collector Current (typ.)
Edc=600V,Vcc=15V,Tj=25° C
20
15
E on
10
5 Eoff
Err
0
0
70 0
20 40 60 80
Collector current : Ic (A)
R e ve rs ed bias ed sa fe ope ra ting a re a
Vc c=1 5V, Tj<= 125 °C (m in .)
100
60 0
50 0
40 0
SCSOA
30 0 (non-repe titive puls e)
20 0
10 0
0
0
R BSO A
(R epe titive puls e)
20 0
400
60 0
800
1 00 0
1200
1400
Colle ctor- Emitter voltage : V ce (V)
Power derating for IG BT (m ax.)
(per device)
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Case Temperature : Tc (°C)
Switching Loss vs. Collector Current (typ.)
Edc=600V,Vcc=15V,Tj=125°C
20
Eon
15
10
Eoff
5
Err
0
0 20 40 60 80 100
Collector current : Ic (A)
Transient therm al resistance (m ax.)
1
FW D
IG BT
0.1
0.01
0 .0 01
0.01
0.1
1
Pulse width :Pw (sec)
Power derating for FW D (max.)
(per device)
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case Tem perature : Tc (°C)

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관련 데이터시트

부품번호상세설명 및 기능제조사
6MBP50TEA120

Econo IPM series IGBT

Fuji Electric
Fuji Electric

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